Sorcha B Healy
Sorcha B Healy
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Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
Role of electronic correlation in the Si (100) reconstruction: a quantum Monte Carlo study
SB Healy, C Filippi, P Kratzer, E Penev, M Scheffler
Physical Review Letters 87 (1), 016105, 2001
Quantum Monte Carlo calculations of H 2 dissociation on Si (001)
C Filippi, SB Healy, P Kratzer, E Pehlke, M Scheffler
Physical review letters 89 (16), 166102, 2002
Active Region Design for High-Speed 850-nm VCSELs
SB Healy, EP O'Reilly, JS Gustavsson, P Westbergh, ┼ Haglund, ...
IEEE Journal of Quantum Electronics 46 (4), 506-512, 2010
Breakup of the conduction band structure of dilute alloys
A PatanŔ, J Endicott, J Ibanez, PN Brunkov, L Eaves, SB Healy, A Lindsay, ...
Physical Review B 71 (19), 195307, 2005
Built-in field control in alloyed c-plane III-N quantum dots and wells
MA Caro, S Schulz, SB Healy, EP O’Reilly
Journal of Applied Physics 109 (8), 2011
Influence of electrostatic confinement on optical gain in GaInNAs quantum-well lasers
SB Healy, P O'Reilly
IEEE journal of quantum electronics 42 (6), 608-615, 2006
Experimental and theoretical study of InAs/InGaAsP/InP quantum dash lasers
SC Heck, S Osborne, SB Healy, EP O'Reilly, F Lelarge, F Poingt, ...
IEEE journal of quantum electronics 45 (12), 1508-1516, 2009
Coulomb effects in type‐II Ga (As) Sb quantum dots
K Gradkowski, TJ Ochalski, DP Williams, SB Healy, J Tatebayashi, ...
physica status solidi (b) 246 (4), 752-755, 2009
An analysis of 1.55 μm InAs∕ InP quantum dash lasers
SC Heck, SB Healy, S Osborne, EP O’Reilly, F Lelarge, F Poingt, ...
Applied Physics Letters 92 (25), 2008
Dynamics of targeted Ransomware negotiation
P Ryan, J Fokker, SB Healy, A Amann
IEEE Access, 04137, 2022
Intervalence band solitary waves in semiconductor quantum wells
F Biancalana, SB Healy, R Fehse, EP O’Reilly
Physical review A 73 (6), 063826, 2006
Influence of cluster states on band dispersion in bulk and quantum well (ultra-) dilute nitride semiconductors
SB Healy, A Lindsay, EP O'Reilly
IEE Proceedings-Optoelectronics 151 (5), 397-401, 2004
High speed 850nm VCSELs for> 40Gb/s transmission
JS Gustavsson, A Larsson, ┼ Haglund, J Bengtsson, P Westbergh, ...
Optical Fiber Communication Conference, OTh4H. 4, 2013
Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates
SB Healy, RJ Young, LO Mereni, V Dimastrodonato, E Pelucchi, ...
Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2761-2764, 2010
Long wavelength transverse magnetic polarized absorption in 1.3 Ám InAs/InGaAs dots-in-a-well type active regions
MT Crowley, SC Heck, SB Healy, S Osborne, DP Williams, S Schulz, ...
Semiconductor science and technology 28 (1), 015012, 2012
Influence of N cluster states on band dispersion in GaInNAs quantum wells
SB Healy, A Lindsay, EP O’Reilly
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 249-253, 2006
Built‐in field control in nitride nanostructures operating in the UV
MA Caro, S Schulz, SB Healy, EP O'Reilly
physica status solidi c 9 (3‐4), 838-841, 2012
Theory of piezoelectric fields in InGaAs site-controlled quantum dots
SB Healy, EP O'Reilly
Journal of Physics: Conference Series 245 (1), 012022, 2010
Band alignment and carrier recombination in GaAsSb/GaAs quantum wells
K Hild, SJ Sweeney, SR Jin, SB Healy, EP O’Reilly, SR Johnson, ...
AIP Conference Proceedings 893 (1), 1431-1432, 2007
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