Ayan Kar
Ayan Kar
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Observation of ultraviolet emission and effect of surface states on the luminescence from tin oxide nanowires
A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan
Applied Physics Letters 94 (10), 2009
22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications
B Sell, B Bigwood, S Cha, Z Chen, P Dhage, P Fan, M Giraud-Carrier, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.4. 1-29.4. 4, 2017
Growth and properties of tin oxide nanowires and the effect of annealing conditions
A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan
Semiconductor science and technology 25 (2), 024012, 2010
Applications of colloidal quantum dots
K Sun, M Vasudev, HS Jung, J Yang, A Kar, Y Li, K Reinhardt, P Snee, ...
Microelectronics Journal 40 (3), 644-649, 2009
Rapid thermal annealing effects on tin oxide nanowires prepared by vapor–liquid–solid technique
A Kar, J Yang, M Dutta, MA Stroscio, J Kumari, M Meyyappan
Nanotechnology 20 (6), 065704, 2009
Tailoring the surface properties and carrier dynamics in SnO2 nanowires
A Kar, MA Stroscio, M Meyyappan, DJ Gosztola, GP Wiederrecht, M Dutta
Nanotechnology 22 (28), 285709, 2011
Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film
A Kar, N Shukla, E Freeman, H Paik, H Liu, R Engel-Herbert, ...
Applied Physics Letters 102 (7), 2013
Evidence of compositional inhomogeneity in InxGa1− xN alloys using ultraviolet and visible Raman spectroscopy.
A Kar, D Alexson, M Dutta, M Stroscio
Journal of Applied Physics 104 (7), 2008
Investigation of nucleation mechanism and tapering observed in ZnO nanowire growth by carbothermal reduction technique
A Kar, KB Low, M Oye, MA Stroscio, M Dutta, A Nicholls, M Meyyappan
Nanoscale Res Lett 6, 1-9, 2011
Probing ultrafast carrier dynamics in silicon nanowires
A Kar, PC Upadhya, SA Dayeh, ST Picraux, AJ Taylor, RP Prasankumar
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 889-895, 2010
Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions
E Freeman, A Kar, N Shukla, R Misra, R Engel-Herbert, D Schlom, ...
70th Device Research Conference, 243-244, 2012
The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires
A Kar, Q Li, PC Upadhya, M Ah Seo, J Wright, TS Luk, GT Wang, ...
Applied Physics Letters 101 (14), 2012
Preliminary investigation on the modification of electronic properties in surface passivated SnO2 nanowires with Schottky contacts on being exposed to 137Cs γ-radiation
A Kar, R Ahern, N Gopalsami, AC Raptis, MA Stroscio, M Dutta
Journal of Applied Physics 111 (8), 2012
Electronic properties of Y‐junctions in SnO2 nanowires
A Kar, MA Stroscio, M Dutta, M Meyyappan
physica status solidi (b) 248 (12), 2848-2852, 2011
ESD diode solution for nanoribbon architectures
N Nidhi, R Ramaswamy, WM Hafez, HY Chang, T Chang, B Fallahazad, ...
US Patent 11,996,403, 2024
Ground state energy in a spherical gaas-(al, ga) as quantum dot with parabolic confinement
A Kar, C Bose
Indian Journal of Physics 80, 357-360, 2006
Gate-all-around integrated circuit structures including varactors
KAR Ayan, S Morarka, C Nieva-lozano, K Kolluru, B Guha, CH Lin, ...
US Patent 11,417,781, 2022
FinFET based capacitors and resistors and related apparatuses, systems, and methods
KAR Ayan, K Phoa, JS Sandford, J Wan, AA Ahsan, LR Paulson, B Sell
US Patent 11,393,934, 2022
Integrated circuit structures including backside vias
NA Thomson, KC Kolluru, AC Faust, FP O'mahony, KAR Ayan, R Ma
US Patent App. 16/728,111, 2021
Vertical diodes in stacked transistor technologies
B Orr, NA Thomson, KAR Ayan, ND Jack, KC Kolluru, P Morrow, ...
US Patent App. 17/448,373, 2023
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