Jeffrey Bokor
Jeffrey Bokor
Professor of electrical engineering and computer sciences, University of California, Berkeley
Verified email at
Cited by
Cited by
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ...
IEEE transactions on electron devices 47 (12), 2320-2325, 2000
MoS2 transistors with 1-nanometer gate lengths
SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ...
Science 354 (6308), 99-102, 2016
FinFET scaling to 10 nm gate length
B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ...
Digest. International Electron Devices Meeting,, 251-254, 2002
Sub 50-nm finfet: Pmos
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Electron thermalization in gold
WS Fann, R Storz, HWK Tom, J Bokor
Physical Review B 46 (20), 13592, 1992
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593 (7858), 211-217, 2021
Direct measurement of nonequilibrium electron-energy distributions in subpicosecond laser-heated gold films
WS Fann, R Storz, HWK Tom, J Bokor
Physical review letters 68 (18), 2834, 1992
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ...
US Patent 6,413,802, 2002
Direct chemical vapor deposition of graphene on dielectric surfaces
A Ismach, C Druzgalski, S Penwell, A Schwartzberg, M Zheng, A Javey, ...
Nano letters 10 (5), 1542-1548, 2010
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu
IEEE Transactions on Electron Devices 44 (3), 414-422, 1997
Sub-50 nm P-channel FinFET
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
IEEE Transactions on Electron Devices 48 (5), 880-886, 2001
Gold nanoparticle self-similar chain structure organized by DNA origami
B Ding, Z Deng, H Yan, S Cabrini, RN Zuckermann, J Bokor
Journal of the American Chemical Society 132 (10), 3248-3249, 2010
Diameter-dependent electron mobility of InAs nanowires
AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey
Nano Letters 9 (1), 360-365, 2009
Sub-20 nm CMOS FinFET technologies
YK Choi, N Lindert, P Xuan, S Tang, D Ha, E Anderson, TJ King, J Bokor, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography
X Liang, YS Jung, S Wu, A Ismach, DL Olynick, S Cabrini, J Bokor
Nano letters 10 (7), 2454-2460, 2010
A folded-channel MOSFET for deep-sub-tenth micron era
D Hisamoto, WC Lee, J Kedzierski, E Anderson, H Takeuchi, K Asano, ...
IEDM Tech. Dig 1998, 1032-1034, 1998
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
JP Llinas, A Fairbrother, G Borin Barin, W Shi, K Lee, S Wu, B Yong Choi, ...
Nature communications 8 (1), 633, 2017
Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
YK Choi, K Asano, N Lindert, V Subramanian, TJ King, J Bokor, C Hu
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Nanofocusing in a metal–insulator–metal gap plasmon waveguide with a three-dimensional linear taper
H Choo, MK Kim, M Staffaroni, TJ Seok, J Bokor, S Cabrini, PJ Schuck, ...
Nature Photonics 6 (12), 838-844, 2012
Extremely scaled silicon nano-CMOS devices
L Chang, Y Choi, D Ha, P Ranade, S Xiong, J Bokor, C Hu, TJ King
Proceedings of the IEEE 91 (11), 1860-1873, 2003
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