2‐Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1–x)Se2x Monolayers J Mann, Q Ma, PM Odenthal, M Isarraraz, D Le, E Preciado, D Barroso, ... Advanced Materials 26 (9), 1399-1404, 2014 | 430 | 2014 |
Highly etch selective amorphous carbon film S Bobek, PK KULSHRESHTHA, R Prasad, KD Lee, H Whitesell, H Oshio, ... US Patent 10,727,059, 2020 | 264 | 2020 |
Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films TA Empante, Y Zhou, V Klee, AE Nguyen, IH Lu, MD Valentin, ... ACS nano 11 (1), 900-905, 2017 | 239 | 2017 |
Superlinear Composition-Dependent Photocurrent in CVD-Grown Monolayer MoS2(1–x)Se2x Alloy Devices V Klee, E Preciado, D Barroso, AE Nguyen, C Lee, KJ Erickson, M Triplett, ... Nano letters 15 (4), 2612-2619, 2015 | 158 | 2015 |
Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange Q Ma, M Isarraraz, CS Wang, E Preciado, V Klee, S Bobek, K Yamaguchi, ... Acs Nano 8 (5), 4672-4677, 2014 | 133 | 2014 |
Band structure characterization of WS2 grown by chemical vapor deposition I Tanabe, M Gomez, WC Coley, D Le, EM Echeverria, G Stecklein, ... Applied Physics Letters 108 (25), 2016 | 65 | 2016 |
Chemical vapor deposition growth of a periodic array of single-layer MoS2 islands via lithographic patterning of an SiO2/Si substrate D Sun, AE Nguyen, D Barroso, X Zhang, E Preciado, S Bobek, V Klee, ... 2D Materials 2 (4), 045014, 2015 | 39 | 2015 |
An MoSx structure with high affinity for adsorbate interaction D Sun, W Lu, D Le, Q Ma, M Aminpour, M Alcántara Ortigoza, S Bobek, ... Angewandte Chemie-German Edition 124 (41), 10430, 2012 | 29 | 2012 |
Single- and few-layer transfer-printed CVD MoS2nanomechanical resonators with enhancement by thermal annealing H Jia, R Yang, AE Nguyen, SN Alvillar, S Bobek, M Wurch, CY Huang, ... 2016 IEEE International Frequency Control Symposium (IFCS), 1-3, 2016 | 4 | 2016 |
Highly etch selective amorphous carbon film R Prasad, S Bobek, PK Kulshreshtha, KD Lee, H Whitesell, H Oshio, ... US Patent 11,469,107, 2022 | 3 | 2022 |
Characterization of film materials in wafer processing technology development by XPS G Saheli, W Liu, C Lazik, Y Uritsky, M Bevan, W Tang, P Ma, ... Journal of Electron Spectroscopy and Related Phenomena 231, 57-67, 2019 | 3 | 2019 |
Electrostatic chucking process SM Bobek, VSC Parimi, PK Kulshreshtha, KD Lee US Patent 12,100,609, 2024 | 2 | 2024 |
Method of in situ ceramic coating deposition SM Bobek, AA Khaja, R Limdulpaiboon, KD Lee US Patent 11,674,222, 2023 | 2 | 2023 |
Targeted heat control systems VSC Parimi, S Radhakrishnan, MIN Xiaoquan, SM Bobek, S Ha, ... US Patent 11,600,470, 2023 | 2 | 2023 |
An STM Study of Molecular Self-Assemblies on Cu (111): Structure, Interaction, and Effects of Confinement M Luo UC Riverside, 2012 | 2 | 2012 |
Highly etch selective amorphous carbon film R Prasad, S Bobek, PK Kulshreshtha, KD Lee, H Whitesell, H Oshio, ... US Patent 12,014,927, 2024 | 1 | 2024 |
Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers K Nittala, SM Bobek, KD Lee, R Limdulpaiboon, D Kioussis, ... US Patent 11,694,902, 2023 | 1 | 2023 |
Pedestal for substrate processing chambers SM Bobek, VSC Parimi, PK Kulshreshtha, VK Prabhakar, KD Lee, S Ha, ... US Patent 11,584,994, 2023 | 1 | 2023 |
Processing chamber deposition confinement SM Bobek, VSC Parimi, S Ha, KD Lee US Patent App. 17/077,624, 2022 | 1 | 2022 |
Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers K Nittala, SM Bobek, KD Lee, R Limdulpaiboon, D Kioussis, ... US Patent 12,131,913, 2024 | | 2024 |