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Masashi Akabori
Masashi Akabori
Verified email at jaist.ac.jp - Homepage
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Cited by
Year
Spin-orbit coupling and phase coherence in InAs nanowires
S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
1232010
InGaAs nano-pillar array formation on partially masked InP (111) B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
M Akabori, J Takeda, J Motohisa, T Fukui
Nanotechnology 14 (10), 1071, 2003
1002003
Band-like transport in highly crystalline graphene films from defective graphene oxides
R Negishi, M Akabori, T Ito, Y Watanabe, Y Kobayashi
Scientific Reports 6 (1), 28936, 2016
832016
MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
K Sladek, V Klinger, J Wensorra, M Akabori, H Hardtdegen, ...
Journal of crystal growth 312 (5), 635-640, 2010
472010
Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas
M Akabori, K Sladek, H Hardtdegen, T Schäpers, D Grützmacher
Journal of Crystal Growth 311 (15), 3813-3816, 2009
462009
Turbostratic multilayer graphene synthesis on CVD graphene template toward improving electrical performance
C Wei, R Negishi, Y Ogawa, M Akabori, Y Taniyasu, Y Kobayashi
Japanese Journal of Applied Physics 58 (SI), SIIB04, 2019
412019
Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures
M Akabori, J Takeda, J Motohisa, T Fukui
Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 446-450, 2002
412002
One-pot synthesis of manganese oxide/graphene composites via a plasma-enhanced electrochemical exfoliation process for supercapacitors
MN Dang, TH Nguyen, T Van Nguyen, TV Thu, H Le, M Akabori, N Ito, ...
Nanotechnology 31 (34), 345401, 2020
352020
Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
P Mohan, F Nakajima, M Akabori, J Motohisa, T Fukui
Applied physics letters 83 (4), 689-691, 2003
332003
Application of sputtering-deposited AlN films to gate dielectric for AlGaN/GaN metal–insulator–semiconductor heterojunction field-effect transistor
HA Shih, M Kudo, M Akabori, T Suzuki
Japanese Journal of Applied Physics 51 (2S), 02BF01, 2012
322012
Spin-splitting analysis of a two-dimensional electron gas in almost strain-free by magnetoresistance measurements
M Akabori, VA Guzenko, T Sato, T Schäpers, T Suzuki, S Yamada
Physical Review B—Condensed Matter and Materials Physics 77 (20), 205320, 2008
292008
Turbostratic stacking effect in multilayer graphene on the electrical transport properties
R Negishi, C Wei, Y Yao, Y Ogawa, M Akabori, Y Kanai, K Matsumoto, ...
physica status solidi (b) 257 (2), 1900437, 2020
272020
Realization of In0. 75Ga0. 25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction
M Akabori, S Hidaka, H Iwase, S Yamada, U Ekenberg
Journal of Applied Physics 112 (11), 2012
232012
Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates
H Takita, N Hashimoto, CT Nguyen, M Kudo, M Akabori, T Suzuki
Applied Physics Letters 97 (1), 2010
232010
Formation of AlxGa1− xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE
J Takeda, M Akabori, J Motohisa, T Fukui
Applied surface science 190 (1-4), 236-241, 2002
212002
Hydrogen intercalation: An approach to eliminate silicon dioxide substrate doping to graphene
T Iwasaki, J Sun, N Kanetake, T Chikuba, M Akabori, M Muruganathan, ...
Applied Physics Express 8 (1), 015101, 2014
192014
Dependence on In content of InxGa1− xAs quantum dots grown along GaAs multiatomic steps by MOVPE
T Ishihara, S Lee, M Akabori, J Motohisa, T Fukui
Journal of crystal growth 237, 1476-1480, 2002
182002
Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
Y Jeong, M Shindo, M Akabori, T Suzuki
Applied physics express 1 (2), 021201, 2008
172008
High-quality highly mismatched InSb films grown on GaAs substrate via thick AlSb and InxAl1− xSb step-graded buffers
T Sato, M Akabori, S Yamada
Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 615-619, 2004
162004
Formation and characterization of modulated two-dimensional electron gas on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
M Akabori, J Motohisa, T Fukui
Journal of crystal growth 195 (1-4), 579-585, 1998
161998
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