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alain rolland
alain rolland
Professeur IUT de Lannion, Université de Rennes1, laboratoire FOTON
Verified email at univ-rennes1.fr
Title
Cited by
Cited by
Year
Electrical properties of amorphous silicon transistors and MIS‐devices: comparative study of top nitride and bottom nitride configurations
A Rolland, J Richard, JP Kleider, D Mencaraglia
Journal of the electrochemical society 140 (12), 3679, 1993
3081993
Analgesic and behavioural effects of Morinda citrifolia
C Younos, A Rolland, J Fleurentin, MC Lanhers, R Misslin, F Mortier
Planta Medica 56 (05), 430-434, 1990
2531990
Test of special relativity using a fiber network of optical clocks
P Delva, J Lodewyck, S Bilicki, E Bookjans, G Vallet, R Le Targat, ...
Physical review letters 118 (22), 221102, 2017
2222017
Behavioural effects of the American traditional plant Eschscholzia californica: sedative and anxiolytic properties
A Rolland, J Fleurentin, MC Lanhers, C Younos, R Misslin, F Mortier, ...
Planta medica 57 (03), 212-216, 1991
1771991
tert-Butyl hydroperoxide-induced injury in isolated rat hepatocytes: a model for studying anti-hepatotoxic crude drugs
M Joyeux, A Rolland, J Fleurentin, F Mortier, P Dorfman
Planta Medica 56 (02), 171-174, 1990
1271990
Behavioral effects of Euphorbia hirta L.: sedative and anxiolytic properties
MC Lanhers, J Fleurentin, P Cabalion, A Rolland, P Dorfman, R Misslin, ...
Journal of ethnopharmacology 29 (2), 189-198, 1990
1201990
Electronic properties of 2D and 3D hybrid organic/inorganic perovskites for optoelectronic and photovoltaic applications
L Pedesseau, JM Jancu, A Rolland, E Deleporte, C Katan, J Even
Optical and Quantum Electronics 46, 1225-1232, 2014
802014
Toward highly efficient inkjet‐printed perovskite solar cells fully processed under ambient conditions and at low temperature
A Gheno, Y Huang, J Bouclé, B Ratier, A Rolland, J Even, S Vedraine
Solar RRL 2 (11), 1800191, 2018
552018
Temperature and polarisation insensitive Bragg gratings realised on silica waveguide on silicon
D Bosc, B Loisel, M Moisan, N Devoldere, F Legall, A Rolland
Electronics Letters 33 (2), 134-136, 1997
481997
Quality control initiative on the evaluation of the dysmegakaryopoiesis in myeloid neoplasms: difficulties in the assessment of dysplasia
JE Goasguen, JM Bennett, BJ Bain, RD Brunning, MT Vallespí, ...
Leukemia Research 45, 75-81, 2016
422016
Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate
A Rolland, L Pedesseau, J Even, S Almosni, C Robert, C Cornet, ...
Optical and Quantum Electronics 46, 1397-1403, 2014
392014
D. Lecrosnier, H. L'Haridon, D. Moutonnet, C. Rochaix
A Rolland, A Le Corre, PN Favennec, M Gauneau, B Lambert
Electron. Lett 24, 956, 1988
371988
Computational analysis of hybrid perovskite on silicon 2-T tandem solar cells based on a Si tunnel junction
A Rolland, L Pedesseau, M Kepenekian, C Katan, Y Huang, S Wang, ...
Optical and Quantum Electronics 50, 1-13, 2018
342018
Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic‐Inorganic Perovskites and III/V Heterostructures
J Even, L Pedesseau, E Tea, S Almosni, A Rolland, C Robert, JM Jancu, ...
International Journal of Photoenergy 2014 (1), 649408, 2014
342014
Influence of Schottky contact on the CV and JV characteristics of HTM-free perovskite solar cells
Y Huang, S Aharon, A Rolland, L Pedesseau, O Durand, L Etgar, J Even
EPJ Photovoltaics 8, 85501, 2017
252017
Erbium Implanted in III–V Materials
C Rochaix, A Rolland, PN Favennec, B Lambert, A Le Corre, H l'Haridon, ...
Japanese journal of applied physics 27 (12A), L2348, 1988
25*1988
Source and drain parasitic resistances of amorphous silicon transistors: Comparison between top nitride and bottom nitride configurations
A Rolland, J Richard, JP Kleider, D Mencaraglia
Japanese journal of applied physics 35 (8R), 4257, 1996
241996
A compact CAD model for amorphous silicon thin film transistors simulation—I. dc analysis
G Merckel, A Rolland
Solid-State Electronics 39 (8), 1231-1239, 1996
241996
Monolithic integration of diluted-nitride III–VN compounds on silicon substrates: toward the III–V/Si concentrated photovoltaics
O Durand, S Almosni, Y Ping Wang, C Cornet, A Létoublon, C Robert, ...
Energy Harvesting and Systems 1 (3-4), 147-156, 2014
202014
Behaviour of erbium implanted in InP
C Rochaix, A Rolland, PN Favennec, B Lambert, A Le Corre, H L’Haridon, ...
Journal of electronic materials 17, 351-354, 1988
201988
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