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Nicola Ciocchini
Nicola Ciocchini
Micron Tech
Verified email at polimi.it
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Year
Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses
S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
2282016
Logic computation in phase change materials by threshold and memory switching
M Cassinerio, N Ciocchini, D Ielmini
Advanced Materials 25 (41), 5975-5980, 2013
1652013
Bipolar switching in chalcogenide phase change memory
N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ...
Scientific reports 6 (1), 29162, 2016
772016
Modeling resistance instabilities of set and reset states in phase change memory with Ge-rich GeSbTe
N Ciocchini, E Palumbo, M Borghi, P Zuliani, R Annunziata, D Ielmini
IEEE Transactions on Electron Devices 61 (6), 2136-2144, 2014
532014
Evidence for non-arrhenius kinetics of crystallization in phase change memory devices
N Ciocchini, M Cassinerio, D Fugazza, D Ielmini
IEEE transactions on electron devices 60 (11), 3767-3774, 2013
402013
Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5
KV Mitrofanov, AV Kolobov, P Fons, X Wang, J Tominaga, Y Tamenori, ...
Journal of Applied Physics 115 (17), 2014
382014
Apparatuses and methods for accessing variable resistance memory device
P Fantini, D Ielmini, N Ciocchini
US Patent 9,990,990, 2018
312018
Impact of thermoelectric effects on phase change memory characteristics
N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini
IEEE Transactions on Electron Devices 62 (10), 3264-3271, 2015
262015
Modeling of threshold-voltage drift in phase-change memory (PCM) devices
N Ciocchini, M Cassinerio, D Fugazza, D Ielmini
IEEE transactions on electron devices 59 (11), 3084-3090, 2012
242012
Unified reliability modeling of Ge-rich phase change memory for embedded applications
N Ciocchini, E Palumbo, M Borghi, P Zuliani, R Annunziata, D Ielmini
2013 IEEE International Electron Devices Meeting, 22.1. 1-22.1. 4, 2013
172013
Pulse-induced crystallization in phase-change memories under set and disturb conditions
N Ciocchini, D Ielmini
IEEE Transactions on Electron Devices 62 (3), 847-854, 2015
142015
Cell-to-cell and cycle-to-cycle retention statistics in phase-change memory arrays
M Rizzi, N Ciocchini, A Montefiori, M Ferro, P Fantini, AL Lacaita, D Ielmini
IEEE Transactions on Electron Devices 62 (7), 2205-2211, 2015
132015
Statistics of set transition in phase change memory (PCM) arrays
M Rizzi, N Ciocchini, S Caravati, M Bernasconi, P Fantini, D Ielmini
2014 IEEE International Electron Devices Meeting, 29.6. 1-29.6. 4, 2014
112014
Evidence for electrically induced drift of threshold voltage in Ge2Sb2Te5
M Cassinerio, N Ciocchini, D Ielmini
Applied Physics Letters 103 (2), 2013
82013
Modeling of crystallization kinetics in phase change memories for set and read disturb regimes
N Ciocchini, D Ielmini
2014 IEEE International Reliability Physics Symposium, 5E. 1.1-5E. 1.6, 2014
72014
Intrinsic retention statistics in phase change memory (PCM) arrays
M Rizzi, N Ciocchini, A Montefiori, M Ferro, P Fantini, AL Lacaita, D Ielmini
2013 IEEE International Electron Devices Meeting, 21.7. 1-21.7. 3, 2013
72013
Reset-induced variability of retention characteristics in phase change memory (PCM)
M Rizzi, N Ciocchini, A Montefiori, M Ferro, AL Lacaita, P Fantini, D Ielmini
2014 IEEE International Reliability Physics Symposium, 5E. 4.1-5E. 4.6, 2014
42014
Non-Arrhenius pulse-induced crystallization in phase change memories
N Ciocchini, M Cassinerio, D Fugazza, D Ielmini
2012 International Electron Devices Meeting, 31.2. 1-31.2. 4, 2012
32012
Apparatuses and methods for accessing variable resistance memory device
P Fantini, D Ielmini, N Ciocchini
US Patent 11,195,579, 2021
22021
Apparatuses and methods for accessing variable resistance memory device
P Fantini, D Ielmini, N Ciocchini
US Patent 10,546,636, 2020
22020
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Articles 1–20