Leo J. Schowalter
Leo J. Schowalter
Nagoya University
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Some effects of oxygen impurities on AlN and GaN
GA Slack, LJ Schowalter, D Morelli, JA Freitas Jr
Journal of crystal growth 246 (3-4), 287-298, 2002
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Z Zhang, M Kushimoto, T Sakai, N Sugiyama, LJ Schowalter, C Sasaoka, ...
Applied Physics Express 12 (12), 124003, 2019
Method and apparatus for producing large, single-crystals of aluminum nitride
LJ Schowalter, GA Slack, JC Rojo, RT Bondokov, KE Morgan, JA Smart
US Patent 8,545,629, 2013
Crystallographic tilting of heteroepitaxial layers
JE Ayers, SK Ghandhi, LJ Schowalter
Journal of crystal growth 113 (3-4), 430-440, 1991
270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power
JR Grandusky, J Chen, SR Gibb, MC Mendrick, CG Moe, L Rodak, ...
Applied Physics Express 6 (3), 032101, 2013
Ultraviolet semiconductor laser diodes on bulk AlN
M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ...
Journal of Applied Physics 101 (12), 2007
High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance
JR Grandusky, SR Gibb, MC Mendrick, C Moe, M Wraback, LJ Schowalter
Applied physics express 4 (8), 082101, 2011
Resonant nonlinear susceptibility near the GaAs band gap
XC Zhang, Y Jin, K Yang, LJ Schowalter
Physical review letters 69 (15), 2303, 1992
Epitaxial growth and characterization of CaF2 on Si
LJ Schowalter, RW Fathauer, RP Goehner, LG Turner, RW DeBlois, ...
Journal of applied physics 58 (1), 302-308, 1985
Growth and characterization of single crystal insulators on silicon
LJ Schowalter, RW Fathauer
Critical Reviews in Solid State and Material Sciences 15 (4), 367-421, 1989
Large-area AlN substrates for electronic applications: An industrial perspective
RT Bondokov, SG Mueller, KE Morgan, GA Slack, S Schujman, MC Wood, ...
Journal of Crystal Growth 310 (17), 4020-4026, 2008
Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si (001) and Au/Si (111) interfaces
LJ Schowalter, EY Lee
Physical Review B 43 (11), 9308, 1991
Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling
S Hashimoto, JL Peng, WM Gibson, LJ Schowalter, RW Fathauer
Applied physics letters 47 (10), 1071-1073, 1985
Molecular beam epitaxy growth and applications of epitaxial fluoride films
LJ Schowalter, RW Fathauer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986
Report on the growth of bulk aluminum nitride and subsequent substrate preparation
JC Rojo, GA Slack, K Morgan, B Raghothamachar, M Dudley, ...
Journal of crystal growth 231 (3), 317-321, 2001
Surface morphology of epitaxial CaF2 films on Si substrates
RW Fathauer, LJ Schowalter
Applied physics letters 45 (5), 519-521, 1984
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
E Silveira, JA Freitas Jr, OJ Glembocki, GA Slack, LJ Schowalter
Physical Review B 71 (4), 041201, 2005
Characterization of atomic force microscope tips by adhesion force measurements
T Thundat, XY Zheng, GY Chen, SL Sharp, RJ Warmack, LJ Schowalter
Applied Physics Letters 63 (15), 2150-2152, 1993
AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
X Hu, J Deng, N Pala, R Gaska, MS Shur, CQ Chen, J Yang, G Simin, ...
Applied Physics Letters 82 (8), 1299-1301, 2003
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