Professor of Physics, Vanderbilt University
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Bandgap Engineering of Strained Monolayer and Bilayer MoS2
HJ Conley, B Wang, JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin
Nano letters 13 (8), 3626-3630, 2013
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ...
Nature materials 13 (12), 1135-1142, 2014
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy
OL Krivanek, MF Chisholm, V Nicolosi, TJ Pennycook, GJ Corbin, ...
Nature 464 (7288), 571-574, 2010
Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction
G Ye, Y Gong, J Lin, B Li, Y He, ST Pantelides, W Zhou, R Vajtai, ...
Nano letters 16 (2), 1097-1103, 2016
First-principles calculation of transport properties of a molecular device
M Di Ventra, ST Pantelides, ND Lang
Physical review letters 84 (5), 979, 2000
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
F Liu, L You, KL Seyler, X Li, P Yu, J Lin, X Wang, J Zhou, H Wang, H He, ...
Nature communications 7 (1), 1-6, 2016
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
The electronic structure of impurities and other point defects in semiconductors
ST Pantelides
Reviews of Modern Physics 50 (4), 797, 1978
Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ...
Nano letters 15 (6), 4013-4018, 2015
Theory of hydrogen diffusion and reactions in crystalline silicon
CG Van de Walle, PJH Denteneer, Y Bar-Yam, ST Pantelides
Physical review B 39 (15), 10791, 1989
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide
Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ...
Nano letters 14 (2), 442-449, 2014
Control of Doping by Impurity Chemical Potentials: Predictions for -Type ZnO
Y Yan, SB Zhang, ST Pantelides
Physical Review Letters 86 (25), 5723, 2001
Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy
AR Klots, AKM Newaz, B Wang, D Prasai, H Krzyzanowska, J Lin, ...
Scientific reports 4 (1), 6608, 2014
Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates
X Lu, MIB Utama, J Lin, X Gong, J Zhang, Y Zhao, ST Pantelides, J Wang, ...
Nano letters 14 (5), 2419-2425, 2014
Microscopic theory of atomic diffusion mechanisms in silicon
R Car, PJ Kelly, A Oshiyama, ST Pantelides
Physica B+ C 127 (1-3), 401-407, 1984
Defects in amorphous silicon: A new perspective
ST Pantelides
Physical review letters 57 (23), 2979, 1986
First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe
CG Van de Walle, DB Laks, GF Neumark, ST Pantelides
Physical Review B 47 (15), 9425, 1993
Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous and
ST Pantelides, WA Harrison
Physical Review B 13 (6), 2667, 1976
Native defects and self-compensation in ZnSe
DB Laks, CG Van de Walle, GF Neumark, PE Blöchl, ST Pantelides
Physical Review B 45 (19), 10965, 1992
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