Jihang Lee
Cited by
Cited by
Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects
X Zhu, J Lee, WD Lu
Advanced Materials, 2017
A general memristor-based partial differential equation solver
MA Zidan, YJ Jeong, J Lee, B Chen, S Huang, MJ Kushner, WD Lu
Nature Electronic 1, 411-420, 2018
Experimental Demonstration of Feature Extraction and Dimensionality Reduction using Memristor Networks
S Choi, JH Shin, J Lee, P Sheridan, WD Lu
Nano Letters 17 (5), 3113–3118, 2017
On‐demand reconfiguration of nanomaterials: when electronics meets ionics
J Lee, WD Lu
Advanced Materials 30 (1), 1702770, 2018
Tuning ionic transport in memristive devices by graphene with engineered nanopores
J Lee, C Du, K Sun, E Kioupakis, WD Lu
Acs Nano 10 (3), 3571-3579, 2016
Tuning resistive switching characteristics of tantalum oxide memristors through Si doping
S Kim, SH Choi, J Lee, WD Lu
ACS nano 8 (10), 10262-10269, 2014
K-means data clustering with memristor networks
YJ Jeong*, J Lee*, J Moon, JH Shin, WD Lu
Nano letters 18 (7), 4447–4453, 2018
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based RRAM
J Lee, W Schell, X Zhu, E Kioupakis, WD Lu
ACS applied materials & interfaces 11 (12), 11579-11586, 2019
Oxide resistive memory with functionalized graphene as built‐in selector element
Y Yang, J Lee, S Lee, CH Liu, Z Zhong, W Lu
Advanced materials 26 (22), 3693-3699, 2014
Retention failure analysis of metal-oxide based resistive memory
S Choi, J Lee, S Kim, WD Lu
Applied Physics Letters 105 (11), 2014
Electronic and Optical Properties of Oxygen Vacancies in Amorphous Ta2O5 from First Principles
J Lee, WD Lu, E Kioupakis
Nanoscale 9, 1120-1127, 2017
Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis
Applied Physics Letters 114 (10), 102104, 2019
Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model
SH Lee, J Moon, YJ Jeong, J Lee, X Li, H Wu, WD Lu
ACS Applied Electronic Materials 2 (3), 701-709, 2020
Electronic properties of tantalum pentoxide polymorphs from first-principles calculations
J Lee, W Lu, E Kioupakis
Applied Physics Letters 105 (20), 202108, 2014
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 2021
Thermal conductivity of rutile germanium dioxide
S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ...
Applied Physics Letters 117 (10), 2020
Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides
M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ...
Advanced Electronic Materials 7 (5), 2001258, 2021
Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles
S Chae, L Williams, J Lee, JT Heron, E Kioupakis
npj Computational Materials 8 (1), 95, 2022
Computational discovery of ultra-wide-band-gap semiconductors
E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ...
APS March Meeting Abstracts 2021, J56. 001, 2021
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based Memristors
J Lee, E Kioupakis, W Lu
Bulletin of the American Physical Society 62, 2017
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