Wan Sik Hwang
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High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ...
Nature communications 3 (1), 1011, 2012
Broadband graphene terahertz modulators enabled by intraband transitions
B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 780, 2012
Three-dimensional semiconductor memory devices and methods of fabricating the same
KS Seol, C Park, K Hwang, H Choi, D Yoo, S Hur, W Hwang, T Nakanishi, ...
US Patent 9,536,970, 2017
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ...
Applied Physics Letters 104 (20), 2014
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied physics letters 101 (1), 2012
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 2014
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
WS Hwang, P Zhao, K Tahy, LO Nyakiti, VD Wheeler, RL Myers-Ward, ...
APL materials 3 (1), 2015
High-performance photocurrent generation from two-dimensional WS2 field-effect transistors
S Hwan Lee, D Lee, W Sik Hwang, E Hwang, D Jena, W Jong Yoo
Applied Physics Letters 104 (19), 2014
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
S Fathipour, M Remskar, A Varlec, A Ajoy, R Yan, S Vishwanath, ...
Applied Physics Letters 106 (2), 2015
Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene
WS Hwang, K Tahy, X Li, HG Xing, AC Seabaugh, CY Sung, D Jena
Applied Physics Letters 100 (20), 2012
Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
WS Hwang, J Chen, WJ Yoo, V Bliznetsov
Journal of Vacuum Science & Technology A 23 (4), 964-970, 2005
Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate
G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
A robust highly aligned DNA nanowire array-enabled lithography for graphene nanoribbon transistors
SH Kang, WS Hwang, Z Lin, SH Kwon, SW Hong
Nano Letters 15 (12), 7913-7920, 2015
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors
W Sik Hwang, M Remskar, R Yan, T Kosel, J Kyung Park, B Jin Cho, ...
Applied Physics Letters 102 (4), 2013
Electrical Characteristics of Memory Devices With a High- Trapping Layer and Dual Tunneling Layer
YQ Wang, WS Hwang, G Zhang, G Samudra, YC Yeo, WJ Yoo
IEEE transactions on electron devices 54 (10), 2699-2705, 2007
High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
HJ Bae, TH Yoo, Y Yoon, IG Lee, JP Kim, BJ Cho, WS Hwang
Nanomaterials 8 (8), 594, 2018
MBE growth of few-layer 2H-MoTe2 on 3D substrates
S Vishwanath, A Sundar, X Liu, A Azcatl, E Lochocki, AR Woll, ...
Journal of Crystal Growth 482, 61-69, 2018
Three-dimensional semiconductor memory devices and methods of fabricating the same
US Patent 20,110,233,648, 0
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