Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ... ACS nano 11 (2), 1588-1596, 2017 | 848 | 2017 |
A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ... Advanced Materials 31 (25), 1808231, 2019 | 223 | 2019 |
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017 | 192 | 2017 |
Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo 2D Materials 8 (1), 012002, 2020 | 168 | 2020 |
Adlayer‐free large‐area single crystal graphene grown on a Cu (111) foil D Luo, M Wang, Y Li, C Kim, KM Yu, Y Kim, H Han, M Biswal, M Huang, ... Advanced Materials 31 (35), 1903615, 2019 | 137 | 2019 |
High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2 C Kim, S Issarapanacheewin, I Moon, KY Lee, C Ra, S Lee, Z Yang, ... Advanced Electronic Materials 6 (3), 1900964, 2020 | 45 | 2020 |
The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ... Nanoscale 11 (37), 17368-17375, 2019 | 39 | 2019 |
Ohmic contact in 2D semiconductors via the formation of a benzyl viologen interlayer D Yue, C Kim, KY Lee, WJ Yoo Advanced Functional Materials 29 (7), 1807338, 2019 | 32 | 2019 |
Metallic contact induced van der Waals gap in a MoS 2 FET C Kim, KY Lee, I Moon, S Issarapanacheewin, WJ Yoo Nanoscale 11 (39), 18246-18254, 2019 | 19 | 2019 |
Fermi level pinning of Monolayer Molybdenum Dichalcogenides. C Kim, I Moon, MS Choi, F Ahmed, X Liu, WJ Yoo APS March Meeting Abstracts 2017, B32. 013, 2017 | 1 | 2017 |
Effects of plasma treatment on surface properties of 2D tungsten diselenide I Moon, S Lee, D Qu, C Kim, WJ Yoo APS March Meeting Abstracts 2018, Y37. 007, 2018 | | 2018 |
Fermi level de-pinning by using one-dimensional edge contact to MoS2 C Kim, I Moon, K Lee, WJ Yoo APS March Meeting Abstracts 2018, L37. 002, 2018 | | 2018 |
Tunneling in BP-MoS heterostructure X Liu, D Qu, C Kim, F Ahmed Bulletin of the American Physical Society 62, 2017 | | 2017 |
Tunneling in BP-MoS2 heterostructure X Liu, D Qu, C Kim, F Ahmed, WJ Yoo APS March Meeting Abstracts 2017, C32. 004, 2017 | | 2017 |
Measurements of Schottky barrier heights formed from metals and 2D transition metal dichalcogedides C Kim, I Moon, S Nam, Y Cho, HJ Shin, S Park, WJ Yoo APS March Meeting Abstracts 2016, R16. 009, 2016 | | 2016 |
Fermi Level Pinning at the Interface of Molybdenum Based Chalcogenides and Metals I Moon, C Kim, S Nam, Y Cho, HJ Shin, S Park, WJ Yoo APS March Meeting Abstracts 2016, R16. 010, 2016 | | 2016 |
Lateral MoS2 p-n junctions formed by chemical doping method WJ Yoo, MS Choi, D Qu, D Lee, X Liu, Y Jang, C Kim, J Ryu APS March Meeting Abstracts 2015, H1. 240, 2015 | | 2015 |