Julien Renard
Julien Renard
Institut Néel, CNRS, Université Grenoble Alpes
Verified email at - Homepage
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Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
J Renard, R Songmuang, G Tourbot, C Bougerol, B Daudin, B Gayral
Physical Review B 80 (12), 121305, 2009
Defect-mediated spin relaxation and dephasing in graphene
MB Lundeberg, R Yang, J Renard, JA Folk
Physical review letters 110 (15), 156601, 2013
Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires
J Renard, R Songmuang, C Bougerol, B Daudin, B Gayral
Nano letters 8 (7), 2092-2096, 2008
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET
B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ...
Nano letters 16 (1), 88-92, 2016
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
O Landré, R Songmuang, J Renard, E Bellet-Amalric, H Renevier, ...
Applied Physics Letters 93 (18), 183109, 2008
In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe2 Van der Waals Ferromagnet
A Purbawati, J Coraux, J Vogel, A Hadj-Azzem, NJ Wu, N Bendiab, ...
ACS applied materials & interfaces 12 (27), 30702-30710, 2020
Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots
J Renard, PK Kandaswamy, E Monroy, B Gayral
Applied Physics Letters 95 (13), 2009
Origins of nonlocality near the neutrality point in graphene
J Renard, M Studer, JA Folk
Physical review letters 112 (11), 116601, 2014
Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
S Dubey, S Lisi, G Nayak, F Herziger, VD Nguyen, T Le Quang, ...
ACS nano 11 (11), 11206-11216, 2017
Interband and intersubband optical characterization of semipolar (112¯ 2)-oriented GaN/AlN multiple-quantum-well structures
L Lahourcade, PK Kandaswamy, J Renard, P Ruterana, H Machhadani, ...
Applied Physics Letters 93 (11), 2008
Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN (112¯ 2): Effect on the structural and optical properties
L Lahourcade, J Renard, B Gayral, E Monroy, MP Chauvat, P Ruterana
Journal of Applied Physics 103 (9), 2008
Spatial fluctuations of optical emission from single ZnO/MgZnO nanowire quantum wells
C Czekalla, J Guinard, C Hanisch, BQ Cao, EM Kaidashev, N Boukos, ...
Nanotechnology 19 (11), 115202, 2008
Unravelling external perturbation effects on the optical phonon response of graphene
N Bendiab, J Renard, C Schwarz, A Reserbat‐Plantey, L Djevahirdjian, ...
Journal of Raman Spectroscopy 49 (1), 130-145, 2018
Coherence and Density Dynamics of Excitons in a Single-Layer MoS2 Reaching the Homogeneous Limit
T Jakubczyk, G Nayak, L Scarpelli, WL Liu, S Dubey, N Bendiab, L Marty, ...
ACS nano 13 (3), 3500-3511, 2019
Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
D Sam-Giao, R Mata, G Tourbot, J Renard, A Wysmolek, B Daudin, ...
Journal of Applied Physics 113 (4), 2013
Real-time imaging of K atoms on graphite: interactions and diffusion
J Renard, MB Lundeberg, JA Folk, Y Pennec
Physical Review Letters 106 (15), 156101, 2011
Optical spectroscopy of cubic GaN in nanowires
J Renard, G Tourbot, D Sam-Giao, C Bougerol, B Daudin, B Gayral
Applied Physics Letters 97 (8), 2010
Exciton-Exciton Interaction beyond the Hydrogenic Picture in a Monolayer in the Strong Light-Matter Coupling Regime
P Stepanov, A Vashisht, M Klaas, N Lundt, S Tongay, M Blei, S Höfling, ...
Physical Review Letters 126 (16), 167401, 2021
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