Christophe J. MULLER
Christophe J. MULLER
Full Professor, Aix-Marseille University
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Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
L Goux, JG Lisoni, M Jurczak, DJ Wouters, L Courtade, C Muller
Journal of Applied Physics 107 (2), 2010
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories
M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ...
IEEE Transactions on Electron Devices 61 (3), 674-681, 2014
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2014
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 28.7. 1-28.7. 4, 2011
Sr-doped PbZr1− xTixO3 ceramic: structural study and field-induced reorientation of ferroelectric domains
C Bedoya, C Muller, JL Baudour, V Madigou, M Anne, M Roubin
Materials Science and Engineering: B 75 (1), 43-52, 2000
Neutron diffraction study of the relaxor-ferroelectric phase transition in disordered Pb(Sc1/2Nb1/2)O3
C Perrin, N Menguy, E Suard, C Muller, C Caranoni, A Stepanov
Journal of Physics: Condensed Matter 12 (33), 7523, 2000
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
M Bocquet, D Deleruyelle, C Muller, JM Portal
Applied Physics Letters 98 (26), 2011
BICOVOX family of oxide anion conductors: chemical, electrical and structural studies
S Lazure, RN Vannier, G Nowogrocki, G Mairesse, C Muller, M Anne, ...
Journal of Materials Chemistry 5 (9), 1395-1403, 1995
Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures
L Courtade, C Turquat, C Muller, JG Lisoni, L Goux, DJ Wouters, ...
Thin solid films 516 (12), 4083-4092, 2008
Accurate analysis of parasitic current overshoot during forming operation in RRAMs
S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ...
Microelectronic engineering 88 (7), 1129-1132, 2011
Compact modeling solutions for oxide-based resistive switching memories (OxRAM)
M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ...
Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014
Switching of nanosized filaments in NiO by conductive atomic force microscopy
F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini
Journal of Applied Physics 112 (6), 2012
Bipolar ReRAM based non-volatile flip-flops for low-power architectures
S Onkaraiah, M Reyboz, F Clermidy, JM Portal, M Bocquet, C Muller, ...
10th IEEE International NEWCAS Conference, 417-420, 2012
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory
T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B de Salvo, ...
Thin Solid Films 533, 19-23, 2012
A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling
L Goux, G Russo, N Menou, JG Lisoni, M Schwitters, V Paraschiv, D Maes, ...
IEEE transactions on electron devices 52 (4), 447-453, 2005
Polarization fatigue in PbZr0. 45Ti0. 55O3-based capacitors studied from high resolution synchrotron x-ray diffraction
N Menou, C Muller, IS Baturin, VY Shur, JL Hodeau
Journal of applied physics 97 (6), 2005
Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
M Putero, MV Coulet, C Muller, C Baehtz, S Raoux, HY Cheng
Applied Physics Letters 108 (10), 2016
Magnetic-field-induced orientation in Co-doped SrBi2Ta2O9 ferroelectric oxide
C Bedoya, C Muller, F Jacob, Y Gagou, MA Fremy, E Elkaim
Journal of Physics: Condensed Matter 14 (45), 11849, 2002
Structural Disorder and Ionic Conductivity in LiVO3: A Neutron Powder Diffraction Study from 340 to 890 K
C Muller, JC Valmalette, JL Soubeyroux, F Bouree, JR Gavarri
Journal of Solid State Chemistry 156 (2), 379-389, 2001
Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof
L Courtade, JL Reyes, L Goux, C Turquat, C Muller, D Wouters
US Patent 7,960,775, 2011
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