Symmetry-dependent field-free switching of perpendicular magnetization L Liu#, C Zhou#, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, ... Nature Nanotechnology 16 (3), 277-282, 2021 | 271 | 2021 |
Current-induced magnetization switching in all-oxide heterostructures L Liu, Q Qin, W Lin, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, W Lu, ... Nature nanotechnology 14 (10), 939-944, 2019 | 204 | 2019 |
Electrical switching of perpendicular magnetization in a single ferromagnetic layer L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ... Physical Review B 101 (22), 220402, 2020 | 112 | 2020 |
Current-induced self-switching of perpendicular magnetization in CoPt single layer L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ... Nature Communications 13 (1), 3539, 2022 | 80 | 2022 |
Field-free magnetization switching induced by the unconventional spin–orbit torque from WTe2 Q Xie, W Lin, S Sarkar, X Shu, S Chen, L Liu, T Zhao, C Zhou, H Wang, ... APL Materials 9 (5), 2021 | 57 | 2021 |
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films S Shi, H Xi, T Cao, W Lin, Z Liu, J Niu, D Lan, C Zhou, J Cao, H Su, ... Nature Communications 14 (1), 1780, 2023 | 37 | 2023 |
Field-free switching of perpendicular magnetization induced by longitudinal spin-orbit-torque gradient X Shu, L Liu, J Zhou, W Lin, Q Xie, T Zhao, C Zhou, S Chen, H Wang, ... Physical Review Applied 17 (2), 024031, 2022 | 36 | 2022 |
Topological Hall effect in ferrimagnetic CoTb single layer J Yu, L Liu, J Deng, C Zhou, H Liu, F Poh, J Chen Journal of Magnetism and Magnetic Materials 487, 165316, 2019 | 26 | 2019 |
Structure, magnetic and thermal properties of FePt–C–BN granular films for heat assisted magnetic recording S Chen, X Shu, Q Xie, C Zhou, J Zhou, J Deng, R Guo, YG Peng, G Ju, ... Journal of Physics D: Applied Physics 53 (13), 135002, 2020 | 22 | 2020 |
Room-temperature spin-orbit torque switching in a manganite-based heterostructure L Liu, G Zhou, X Shu, C Li, W Lin, L Ren, C Zhou, T Zhao, R Guo, Q Xie, ... Physical Review B 105 (14), 144419, 2022 | 20 | 2022 |
Spin-orbit torque in chemically disordered and -ordered X Shu, J Zhou, J Deng, W Lin, J Yu, L Liu, C Zhou, P Yang, J Chen Physical Review Materials 3 (11), 114410, 2019 | 19 | 2019 |
Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching Q Xie, W Lin, J Liang, H Zhou, M Waqar, M Lin, SL Teo, H Chen, X Lu, ... Advanced Materials 34 (33), 2109449, 2022 | 17 | 2022 |
Role of Interfacial Orbital Hybridization in Spin-Orbit-Torque Generation in -Based Heterostructures X Shu, J Zhou, L Liu, W Lin, C Zhou, S Chen, Q Xie, L Ren, Y Xiaojiang, ... Physical Review Applied 14 (5), 054056, 2020 | 17 | 2020 |
Efficient spin–orbit torque switching in a perpendicularly magnetized Heusler alloy MnPtGe single layer L Ren, C Zhou, X Song, HT Seng, L Liu, C Li, T Zhao, Z Zheng, J Ding, ... ACS nano 17 (7), 6400-6409, 2023 | 15 | 2023 |
Enhancement of out‐of‐plane spin–orbit torque by interfacial modification T Zhao, L Liu, C Zhou, Z Zheng, H Li, Q Xie, B Yao, L Ren, J Chai, Z Dong, ... Advanced Materials 35 (12), 2208954, 2023 | 13 | 2023 |
Thermal effect in current-induced magnetization switching and out-of-plane effective field measurements L Liu, T Zhao, L Ren, C Zhou, W Lin, X Shu, J Zhou, Q Xie, J Chen ACS Applied Electronic Materials 3 (6), 2483-2489, 2021 | 7 | 2021 |
Giant spin torque efficiency in single-crystalline antiferromagnet Mn2Au films S Chen, X Shu, J Zhou, C Zhou, Q Xie, T Zhao, L Liu, W Lin, J Chen Sci. China Mater. 64, 2029-36, 2021 | 6 | 2021 |
Crystal symmetry-dependent in-plane hall effect L Liu, A Pezo, DG Ovalle, C Zhou, Q Shen, H Chen, T Zhao, W Lin, L Jia, ... Nano Letters 24 (2), 733-740, 2024 | 4 | 2024 |
Large-Scale Epitaxial Growth of Ultralong Stripe BiFeO3 Films and Anisotropic Optical Properties H Wang, H Wu, X Chi, Y Li, C Zhou, P Yang, X Yu, J Wang, GM Chow, ... ACS Applied Materials & Interfaces 14 (6), 8557-8564, 2022 | 4 | 2022 |
Observation of Anomalous Hall Effect in Collinear Antiferromagnet IrMn D Zhu, J Lu, Y Jiang, Z Zheng, D Wang, C Zhou, J Zhou, S Chen, Y Gu, ... Nano Letters, 2025 | | 2025 |