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Ashkar Ali
Ashkar Ali
Intel Corporation
Verified email at psu.edu
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A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate…
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
4152017
Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and…
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
2009 IEEE international electron devices meeting (IEDM), 1-3, 2009
2012009
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97, 143502, 2010
166*2010
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010
942010
Insight into the output characteristics of III-V tunneling field effect transistors
B Rajamohanan, D Mohata, A Ali, S Datta
Applied Physics Letters 102 (9), 2013
582013
Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system
I Geppert, M Eizenberg, A Ali, S Datta
Applied Physics Letters 97 (16), 2010
392010
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
WC Kao, A Ali, E Hwang, S Mookerjea, S Datta
Solid-state electronics 54 (12), 1665-1668, 2010
382010
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 6.3. 1-6.3. 4, 2010
292010
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect
A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ...
IEEE transactions on electron devices 58 (5), 1397-1403, 2011
272011
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ...
Electron Device Letters, IEEE 32 (12), 1689-1691, 2011
252011
Effect of interface states on the performance of antimonide nMOSFETs
A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta
IEEE electron device letters 34 (3), 360-362, 2013
152013
Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
International Electron Devices Meeting, 949, 2009
142009
A New Design of Grid Tie Inverter for a Grid Interactive Solar Photovoltaic Power Generation–An Innovative Option for Energy Conservation & Security
M Gohul, T Jayachandran, AMS Ali, TG Raju, NS Kumar, MR Saravanan
Power 7109, 161-166, 2011
122011
FABRICATION OF A DIFFUSION CELL FOR THE DETERMINATION OF DRUG RELEASE FROMTOPICAL AEROSOL FORMULATIONS
A Ali, S Radha, SP Agarwal
Indian drugs 34 (12), 715-717, 1997
111997
Processing and characterization of GaSb/high-k dielectric interfaces
E Hwang, C Eaton, S Mujumdar, H Madan, A Ali, D Bhatia, S Datta, ...
ECS Transactions 41 (5), 157, 2011
82011
IEDM Tech. Dig.
S Mookerjea, D Mohata, R Krishnan, J Sing, A Vallett, A Ali, T Mayer, ...
Tech. Dig, 949, 2009
82009
OC-143 Artificial neural network for the risk stratification of acute upper gastrointestinal bleeding: multicentre comparative analysis vs the Glasgow Blatchford and rockall scores
A Ali, J Swingland, CH Choi, J Chan, S Khan, S Bose, L Ayaru
Gut 61 (Suppl 2), A62-A62, 2012
72012
Antimonide NMOSFET with source side injection velocity of 2.7107cm/s for low power high performance logic applications
A Ali, H Madan, MJ Barth, MJ Hollander, JB Boos, BR Bennett, S Datta
2012 Symposium on VLSI Technology (VLSIT), 181-182, 2012
62012
Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application
M Barth, A Agrawal, A Ali, J Fastenau, WK Liu, S Datta
Device Research Conference (DRC), 2013
52013
Implementation of cogeneration technique in textile industry for energy conservation
M Gohul, AMS Ali, TG Raju, MR Saravanan, A Pasupathy
International Journal of Engineering Research and Applications 2 (5), 1421-1427, 2012
32012
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