José Menéndez
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Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α− S n: Anharmonic effects
J Menéndez, M Cardona
Physical Review B 29 (4), 2051, 1984
Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices
AK Sood, J Menendez, M Cardona, K Ploog
Physical review letters 54 (19), 2111, 1985
Interface vibrational modes in GaAs-AlAs superlattices
AK Sood, J Menendez, M Cardona, K Ploog
Physical review letters 54 (19), 2115, 1985
Hybrid Group IV/III-V Semiconductor Structures
J Kouvetakis, J Menendez
US Patent App. 13/062,304, 2011
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
J Kouvetakis, M Bauer, J Menendez, CW Hu, IST Tsong, J Tolle
US Patent 7,589,003, 2009
Optical critical points of thin-film alloys: A comparative study
VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
J Kouvetakis, J Menendez, J Tolle, L Liao, D Samara-Rubio
US Patent 7,582,891, 2009
Ge–Sn semiconductors for band-gap and lattice engineering
M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ...
Applied physics letters 81 (16), 2992-2994, 2002
Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon
J Kouvetakis, J Menendez, AVG Chizmeshya
Annu. Rev. Mater. Res. 36 (1), 497-554, 2006
Type-I strained-layer heterostructures with a direct bandgap
J Menendez, J Kouvetakis
Applied physics letters 85 (7), 1175-1177, 2004
Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon
J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ...
Applied physics letters 97 (22), 2010
Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications
J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis
Applied physics letters 95 (13), 2009
Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs
J Menendéz, M Cardona
Physical Review B 31 (6), 3696, 1985
First-principles quantum molecular-dynamics study of the vibrations of icosahedral
GB Adams, JB Page, OF Sankey, K Sinha, J Menendez, DR Huffman
Physical Review B 44 (8), 4052, 1991
Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100)
YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ...
Applied physics letters 90 (6), 2007
Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys
VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez
Physical Review Letters 102 (10), 107403, 2009
Phonons in GaAs-AlxGa1− xAs superlattices
J Menéndez
Journal of luminescence 44 (4-6), 285-314, 1989
Empirical bond polarizability model for fullerenes
S Guha, J Menendez, JB Page, GB Adams
Physical Review B 53 (19), 13106, 1996
Synthesis of ternary SiGeSn semiconductors on Si(100) via buffer layers
M Bauer, C Ritter, PA Crozier, J Ren, J Menendez, G Wolf, J Kouvetakis
Applied physics letters 83 (11), 2163-2165, 2003
Raman studies of semiconducting oxide nanobelts
K Mcguire, ZW Pan, ZL Wang, D Milkie, J Menendez, AM Rao
Journal of nanoscience and nanotechnology 2 (5), 499-502, 2002
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