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Tien Dat Ngo
Tien Dat Ngo
Verified email at imec.be
Title
Cited by
Cited by
Year
Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts
TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ...
Advanced Electronic Materials 7 (5), 2001212, 2021
442021
Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping
TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo
Advanced Electronic Materials 6 (10), 2000616, 2020
262020
Recent progress in 1D contacts for 2D‐material‐based devices
MS Choi, N Ali, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo
Advanced Materials 34 (39), 2202408, 2022
232022
Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials
MS Choi, M Lee, TD Ngo, J Hone, WJ Yoo
Advanced Electronic Materials 7 (10), 2100449, 2021
182021
Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2
F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ...
2D Materials 8 (3), 035027, 2021
182021
Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors
TD Ngo, MS Choi, M Lee, F Ali, Y Hassan, N Ali, S Liu, C Lee, J Hone, ...
Advanced Science 9 (26), 2202465, 2022
152022
Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor
F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo
Advanced Electronic Materials 8 (9), 2200046, 2022
122022
Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
TD Ngo, T Huynh, H Jung, F Ali, J Jeon, MS Choi, WJ Yoo
Advanced Science 10 (21), 2301400, 2023
82023
Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts
Z Wang, N Ali, TD Ngo, H Shin, S Lee, WJ Yoo
Advanced Functional Materials 33 (28), 2301651, 2023
82023
Anomalously persistent p-type behavior of WSe 2 field-effect transistors by oxidized edge-induced Fermi-level pinning
TD Ngo, MS Choi, M Lee, F Ali, WJ Yoo
Journal of Materials Chemistry C 10 (3), 846-853, 2022
82022
Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts
HY Le Thi, TD Ngo, NAN Phan, WJ Yoo, K Watanabe, T Taniguchi, N Aoki, ...
Small 18 (46), 2204547, 2022
72022
Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs
K Lee, TD Ngo, S Lee, H Shin, MS Choi, J Hone, WJ Yoo
Advanced Electronic Materials, 2200955, 2023
62023
Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering
HY Le Thi, TD Ngo, NAN Phan, H Shin, I Uddin, A Venkatesan, CT Liang, ...
ACS Applied Materials & Interfaces 15 (29), 35342-35349, 2023
22023
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping
TD Ngo, T Huynh, I Moon, T Taniguchi, K Watanabe, MS Choi, WJ Yoo
Nano Letters 23 (23), 11345-11352, 2023
12023
Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors
N Ali, M Lee, F Ali, TD Ngo, H Park, H Shin, WJ Yoo
ACS Applied Materials & Interfaces 15 (10), 13299-13306, 2023
12023
Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors
N Ali, M Lee, F Ali, H Shin, TD Ngo, K Watanabe, T Taniguchi, B Oh, ...
ACS Applied Nano Materials 5 (12), 18376-18384, 2022
12022
Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors
S Lee, X Wang, H Shin, N Ali, TD Ngo, E Hwang, GH Kim, GY Yeom, ...
ACS Applied Electronic Materials, 2024
2024
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors
F Ali, H Choi, N Ali, Y Hassan, TD Ngo, F Ahmed, WK Park, Z Sun, ...
Advanced Electronic Materials, 2400071, 2024
2024
Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus
N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ...
ACS nano 18 (18), 11978-11987, 2024
2024
Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs
T Huynh, TD Ngo, H Choi, M Choi, W Lee, TD Nguyen, TT Tran, K Lee, ...
ACS Applied Materials & Interfaces 16 (3), 3694-3702, 2024
2024
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