Tien Dat Ngo
Tien Dat Ngo
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Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts
TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ...
Advanced Electronic Materials 7 (5), 2001212, 2021
Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping
TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo
Advanced Electronic Materials 6 (10), 2000616, 2020
Recent progress in 1D contacts for 2D‐material‐based devices
MS Choi, N Ali, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo
Advanced Materials 34 (39), 2202408, 2022
Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materials
MS Choi, M Lee, TD Ngo, J Hone, WJ Yoo
Advanced Electronic Materials 7 (10), 2100449, 2021
Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2
F Ali, F Ahmed, M Taqi, SB Mitta, TD Ngo, DJ Eom, K Watanabe, ...
2D Materials 8 (3), 035027, 2021
Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors
TD Ngo, MS Choi, M Lee, F Ali, Y Hassan, N Ali, S Liu, C Lee, J Hone, ...
Advanced Science 9 (26), 2202465, 2022
Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor
F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo
Advanced Electronic Materials 8 (9), 2200046, 2022
Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
TD Ngo, T Huynh, H Jung, F Ali, J Jeon, MS Choi, WJ Yoo
Advanced Science 10 (21), 2301400, 2023
Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts
Z Wang, N Ali, TD Ngo, H Shin, S Lee, WJ Yoo
Advanced Functional Materials 33 (28), 2301651, 2023
Anomalously persistent p-type behavior of WSe 2 field-effect transistors by oxidized edge-induced Fermi-level pinning
TD Ngo, MS Choi, M Lee, F Ali, WJ Yoo
Journal of Materials Chemistry C 10 (3), 846-853, 2022
Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts
HY Le Thi, TD Ngo, NAN Phan, WJ Yoo, K Watanabe, T Taniguchi, N Aoki, ...
Small 18 (46), 2204547, 2022
Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs
K Lee, TD Ngo, S Lee, H Shin, MS Choi, J Hone, WJ Yoo
Advanced Electronic Materials, 2200955, 2023
Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering
HY Le Thi, TD Ngo, NAN Phan, H Shin, I Uddin, A Venkatesan, CT Liang, ...
ACS Applied Materials & Interfaces 15 (29), 35342-35349, 2023
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping
TD Ngo, T Huynh, I Moon, T Taniguchi, K Watanabe, MS Choi, WJ Yoo
Nano Letters 23 (23), 11345-11352, 2023
Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors
N Ali, M Lee, F Ali, TD Ngo, H Park, H Shin, WJ Yoo
ACS Applied Materials & Interfaces 15 (10), 13299-13306, 2023
Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors
N Ali, M Lee, F Ali, H Shin, TD Ngo, K Watanabe, T Taniguchi, B Oh, ...
ACS Applied Nano Materials 5 (12), 18376-18384, 2022
Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors
S Lee, X Wang, H Shin, N Ali, TD Ngo, E Hwang, GH Kim, GY Yeom, ...
ACS Applied Electronic Materials, 2024
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors
F Ali, H Choi, N Ali, Y Hassan, TD Ngo, F Ahmed, WK Park, Z Sun, ...
Advanced Electronic Materials, 2400071, 2024
Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus
N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ...
ACS nano 18 (18), 11978-11987, 2024
Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs
T Huynh, TD Ngo, H Choi, M Choi, W Lee, TD Nguyen, TT Tran, K Lee, ...
ACS Applied Materials & Interfaces 16 (3), 3694-3702, 2024
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