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T.P. Pearsall
T.P. Pearsall
EPIC
Verified email at ieee.org
Title
Cited by
Cited by
Year
GaInAsP alloy semiconductors
TTP Pearsall
(No Title), 1982
571*1982
Waveguiding in planar photonic crystals
M Loncar, D Nedeljkovic, T Doll, J Vuckovic, A Scherer, TP Pearsall
Silicon-based and Hybrid Optoelectronics III 4293, 94-99, 2001
5402001
Structurally induced optical transitions in Ge-Si superlattices
TP Pearsall, J Bevk, LC Feldman, JM Bonar, JP Mannaerts, A Ourmazd
Physical review letters 58 (7), 729, 1987
3951987
GexSi1− x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm
H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi
Applied Physics Letters 48 (15), 963-965, 1986
2901986
The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
TP Pearsall, F Capasso, RE Nahory, MA Pollack, JR Chelikowsky
Solid-State Electronics 21 (1), 297-302, 1978
1961978
An experimental determination of the effective masses for GaxIn1− xAsyP1− y alloys grown on InP
RJ Nicholas, JC Portal, C Houlbert, P Perrier, TP Pearsall
Applied Physics Letters 34 (8), 492-494, 1979
1601979
Impact ionization rates for electrons and holes in Ga0. 47In0. 53As
TP Pearsall
Applied Physics Letters 36 (3), 218-220, 1980
1591980
1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
H Temkin, K Alavi, WR Wagner, TP Pearsall, AY Cho
Applied physics letters 42 (10), 845-847, 1983
1561983
Silicon-germanium alloys and heterostructures: optical and electronic properties
TP Pearsall
Critical Reviews in Solid State and Material Sciences 15 (6), 551-600, 1989
1511989
Single longitudinal‐mode optical phonon scattering in Ga0. 47In0. 53As
TP Pearsall, R Carles, JC Portal
Applied Physics Letters 42 (5), 436-438, 1983
1451983
Experimental and theoretical confirmation of Bloch-mode light propagation in planar photonic crystal waveguides
M Lončar, D Nedeljković, TP Pearsall, J Vučković, A Scherer, S Kuchinsky, ...
Applied physics letters 80 (10), 1689-1691, 2002
1432002
The Ga0. 47In0. 53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm
TP Pearsall, M Papuchon
Applied Physics Letters 33 (7), 640-642, 1978
1381978
Efficient lattice‐matched double‐heterostructure LED’s at 1.1 μm from GaxIn1− xAsyP1− y
TP Pearsall, BI Miller, RJ Capik, KJ Bachmann
Applied Physics Letters 28 (9), 499-501, 1976
1341976
High T/sub c/superconductornoble-metal contacts with surface resistivities in the 10/sup-10/. cap omega. cm/sup 2/range
JW Ekin, TM Larson, NF Bergren, AJ Nelson, AB Swartzlander, ...
Appl. Phys. Lett.;(United States) 52 (21), 1988
1261988
Ga 0.47 In 0.53 As: A ternary semiconductor for photodetector applications
T Pearsall
IEEE Journal of Quantum Electronics 16 (7), 709-720, 1980
1221980
Avalanche gain in GexSi1-x/Si infrared waveguide detectors
TP Pearsall, H Temkin, JC Bean, S Luryi
IEEE electron device letters 7 (5), 330-332, 1986
1191986
Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
TP Pearsall, JC Bean
IEEE electron device letters 7 (5), 308-310, 1986
1191986
Electronic structure of Ge/Si monolayer strained-layer superlattices
TP Pearsall, J Bevk, JC Bean, J Bonar, JP Mannaerts, A Ourmazd
Physical Review B 39 (6), 3741, 1989
1181989
Electroreflectance spectroscopy of Si-Ge x Si 1− x quantum-well structures
TP Pearsall, FH Pollak, JC Bean, R Hull
Physical Review B 33 (10), 6821, 1986
1171986
Ge0. 6Si0. 4 rib waveguide avalanche photodetectors for 1.3 μm operation
H Temkin, A Antreasyan, NA Olsson, TP Pearsall, JC Bean
Applied physics letters 49 (13), 809-811, 1986
1151986
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