| 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12 μm pixel with front-side deep-trench isolation and vertical transfer gate JC Ahn, K Lee, Y Kim, H Jeong, B Kim, H Kim, J Park, T Jung, W Park, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 81 | 2014 |
| Effect of ZnO addition in In2O3 ceramics: defect chemistry and sintering behavior DH Park, KY Son, JH Lee, JJ Kim, JS Lee Solid State Ionics 172 (1-4), 431-434, 2004 | 51 | 2004 |
| A 0.8 µm smart dual conversion gain pixel for 64 megapixels CMOS image sensor with 12k e-full-well capacitance and low dark noise D Park, SW Lee, J Han, D Jang, H Kwon, S Cha, M Kim, H Lee, S Suh, ... 2019 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2019 | 37 | 2019 |
| 7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation JE Park, S Park, K Cho, T Lee, C Lee, DH Kim, B Lee, SI Kim, HC Ji, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 122-124, 2021 | 36 | 2021 |
| A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9 μm unit pixels separated by full-depth deep-trench isolation Y Kim, W Choi, D Park, H Jeoung, B Kim, Y Oh, S Oh, B Park, E Kim, ... 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 84-86, 2018 | 36 | 2018 |
| A 0.8 μm nonacell for 108 megapixels CMOS image sensor with FD-shared dual conversion gain and 18,000 e-full-well capacitance Y Oh, M Kim, W Choi, H Choi, H Jeon, J Seok, Y Choi, J Jung, K Yoo, ... 2020 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2020 | 22 | 2020 |
| Image sensor with conductive pixel separation structure and method of manufacturing the same YS Oh, DH Park, H Kwon US Patent 10,748,955, 2020 | 22 | 2020 |
| Co-doping effect of SnO2 and ZnO in In2O3 ceramics: Change in solubility limit and electrical properties KH Seo, DH Park, JH Lee, JJ Kim Solid State Ionics 177 (5-6), 601-605, 2006 | 19 | 2006 |
| Phase development procedure of In2O3 (ZnO) 3 ceramics and its sintering behavior KY Son, DH Park, JH Lee, JJ Kim, JS Lee Solid State Ionics 172 (1-4), 425-429, 2004 | 18 | 2004 |
| Pixel, pixel array, image sensor including the same and method for operating the image sensor SH Sa, II Woon, SH Park, CH Jeong, DH Park, CY Park, JC Kyoung, ... US Patent 8,599,294, 2013 | 14 | 2013 |
| World first mass productive 0.8㎛ pixel size image sensor with new optical isolation tech-nology to minimize optical loss for high sensitivity Y Lee, J Park, B Kim, J Kim, H Yoo, S Nah, D Park, T Lee, B Kim, D Keum, ... IISW, 2019 | 11 | 2019 |
| 0.8㎛-pitch CMOS Image Sensor with Dual Conversion Gain Pixel for Mobile Applications D Jang, D Park, S Cha, H Kwon, M Kim, S Lee, H Lee, S Kim, N Lee, ... IISW, 2019 | 8 | 2019 |
| CMOS image sensor DH Park US Patent 7,652,314, 2010 | 7 | 2010 |
| Image sensors P Jongeun, Y Kim, D Park, J Ahn US Patent 9,991,299, 2018 | 4 | 2018 |
| Image sensor D Park, S Cha, K Cheolju, Y Kim, P Jongeun, J Ahn, C Yujung US Patent 9,865,635, 2018 | 4 | 2018 |
| CMOS image sensor DH Park US Patent 8,093,636, 2012 | 4 | 2012 |
| Pixel, pixel array, image sensor including the same and method for operating the image sensor SH Sa, WI Choi, SH Park, CH Jeong, DH Park, CY Park, JC Kyoung, ... US Patent 8,704,928, 2014 | 3 | 2014 |
| Image sensor and method of manufacturing the same D Park, S Cha, K Cheolju, Y Kim, P Jongeun, J Ahn, C Yujung US Patent App. 15/410,859, 2017 | 2 | 2017 |
| A Low-Voltage 0.7 µm Pixel with 6000 e-Full-Well Capacity for a Low-Power CMOS Image Sensor SW Lee, S Cha, D Jang, M Kim, H Lee, N Lee, S Kim, K Oh, D Lee, ... Electronic Imaging 33, 1-6, 2021 | 1 | 2021 |
| Image sensor K Oh, M Kim, D Park, J Park, S Lee, H Lee US Patent App. 17/585,777, 2022 | | 2022 |
