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Ram Krishna Ghosh
Ram Krishna Ghosh
Assistant Professor, ECE, IIIT-Delhi
Verified email at iiitd.ac.in - Homepage
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Cited by
Cited by
Year
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
7202016
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...
Nature Communications 6, 7311, 2015
4412015
Atomically thin heterostructures based on single-layer tungsten diselenide and graphene
YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ...
Nano letters 14 (12), 6936-6941, 2014
1862014
Monolayer transition metal dichalcogenide channel-based tunnel transistor
RK Ghosh, S Mahapatra
IEEE Journal of the electron devices society 1 (10), 175-180, 2013
1172013
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
652016
Two-dimensional tantalum disulfide: controlling structure and properties via synthesis
R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ...
2D Materials 5 (2), 025001, 2018
492018
Germanane: A low effective mass and high bandgap 2-D channel material for future FETs
RK Ghosh, M Brahma, S Mahapatra
IEEE Transactions on Electron Devices 61 (7), 2309-2315, 2014
482014
Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM
N Shukla, RK Ghosh, B Grisafe, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017
402017
Performance Analysis of Strained MonolayerMOSFET
A Sengupta, RK Ghosh, S Mahapatra
IEEE transactions on electron devices 60 (9), 2782-2787, 2013
402013
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017
392017
Intrinsic spin-dynamical properties of two-dimensional half-metallic ( = Cl, Br, I) ferromagnets: Insight from density functional theory calculations
RK Ghosh, A Jose, G Kumari
Physical Review B 103 (5), 054409, 2021
352021
Direct Band-to-Band Tunneling in Reverse BiasedNanoribbon p-n Junctions
RK Ghosh, S Mahapatra
IEEE transactions on electron devices 60 (1), 274-279, 2012
332012
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016
322016
First-principles calculation of shift current bulk photovoltaic effect in two-dimensional α-
RP Tiwari, B Birajdar, RK Ghosh
Physical Review B 101 (23), 235448, 2020
272020
Investigation of room temperature ferromagnetism in transition metal doped BiFeO3
V Sharma, RK Ghosh, BK Kuanr
Journal of Physics: Condensed Matter 31 (39), 395802, 2019
222019
Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ...
Advanced Materials Interfaces 6 (22), 1901055, 2019
202019
Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures
B Grisafe, R Zhao, RK Ghosh, JA Robinson, S Datta
Applied Physics Letters 113 (14), 2018
202018
Strain engineering of ferroelectric KNbO3 for bulk photovoltaic applications: an insight from density functional theory calculations
RP Tiwari, B Birajdar, RK Ghosh
Journal of Physics: Condensed Matter 31 (50), 505502, 2019
192019
Proposal for graphene–boron nitride heterobilayer-based tunnel FET
RK Ghosh, S Mahapatra
IEEE transactions on nanotechnology 12 (5), 665-667, 2013
162013
Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation
R Zhao, B Grisafe, RK Ghosh, K Wang, S Datta, J Robinson
Nanoscale 11 (13), 6016-6022, 2019
132019
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