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Alain Le Corre
Alain Le Corre
Unknown affiliation
Verified email at insa-rennes.fr
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Year
Transparent optical packet switching: The European ACTS KEOPS project approach
C Guillemot, M Renaud, P Gambini, C Janz, I Andonovic, R Bauknecht, ...
Journal of lightwave technology 16 (12), 2117, 1998
6321998
Relationship between self‐organization and size of InAs islands on InP (001) grown by gas‐source molecular beam epitaxy
A Ponchet, A Le Corre, H L’haridon, B Lambert, S Salaün
Applied physics letters 67 (13), 1850-1852, 1995
2521995
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
2102001
High-gain and low-threshold InAs quantum-dot lasers on InP
P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ...
Applied Physics Letters 87 (24), 2005
1642005
Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature
DT Nguyen, L Lombez, F Gibelli, S Boyer-Richard, A Le Corre, O Durand, ...
Nature Energy 3 (3), 236-242, 2018
1092018
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 2013
772013
Strain in InAs islands grown on InP (001) analyzed by Raman spectroscopy
J Groenen, A Mlayah, R Carles, A Ponchet, A Le Corre, S Salaün
Applied physics letters 69 (7), 943-945, 1996
771996
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ...
Journal of crystal growth 251 (1-4), 230-235, 2003
762003
Universal description of III-V/Si epitaxial growth processes
I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ...
Physical review materials 2 (6), 060401, 2018
692018
Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors
B Lambert, A Le Corre, Y Toudic, C Lhomer, G Grandpierre, M Gauneau
Journal of Physics: Condensed Matter 2 (2), 479, 1990
681990
Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures
J Rodičre, L Lombez, A Le Corre, O Durand, JF Guillemoles
Applied Physics Letters 106 (18), 2015
662015
Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP (001) by gas source molecular beam epitaxy
A Ponchet, A Le Corre, A Godefroy, S Salaün, A Poudoulec
Journal of crystal growth 153 (3-4), 71-80, 1995
621995
Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP/sub x/Sb/sub (1-x)/layers on
A Guivarc'h, J Caulet, A Le Corre
Electronics Letters 16 (25), 1050-1052, 1989
581989
Schottky and field‐effect transistor fabrication on InP and GaInAs
S Loualiche, H L’haridon, A Le Corre, D Lecrosnier, M Salvi, ...
Applied physics letters 52 (7), 540-542, 1988
551988
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
T Quinci, J Kuyyalil, TN Thanh, YP Wang, S Almosni, A Létoublon, ...
Journal of Crystal Growth 380, 157-162, 2013
512013
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
C Robert, C Cornet, P Turban, TN Thanh, MO Nestoklon, J Even, ...
Physical Review B 86 (20), 205316, 2012
512012
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
T Nguyen Thanh, C Robert, W Guo, A Létoublon, C Cornet, G Elias, ...
Journal of applied physics 112 (5), 2012
492012
Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection
C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ...
Semiconductor science and technology 20 (5), 459, 2005
482005
1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer
A Godefroy, A Le Corre, F Clerot, S Salaun, S Loualiche, JC Simon, ...
IEEE photonics technology letters 7 (5), 473-475, 1995
481995
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 2011
472011
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