| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 299 | 2022 |
| Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond M Kim, JH Seo, U Singisetti, Z Ma Journal of Materials Chemistry C 5 (33), 8338-8354, 2017 | 253 | 2017 |
| N-polar GaN epitaxy and high electron mobility transistors M. H. Wong, S. Keller, S. Dasgupta, D. J. Denninghoff, S. Kolluri, D. F ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 253 | 2013 |
| 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs K Zeng, A Vaidya, U Singisetti IEEE Electron Device Letters 39 (9), 1385-1388, 2018 | 235 | 2018 |
| Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage S Sharma, K Zeng, S Saha, U Singisetti IEEE Electron Device Letters 41 (6), 836-839, 2020 | 216 | 2020 |
| Ab initio velocity-field curves in monoclinic β-Ga2O3 K Ghosh, U Singisetti Journal of Applied Physics 122 (3), 2017 | 171 | 2017 |
| Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology K Zeng, JS Wallace, C Heimburger, K Sasaki, A Kuramata, T Masui, ... IEEE Electron Device Letters 38 (4), 513-516, 2017 | 147 | 2017 |
| Impact ionization in β-Ga2O3 K Ghosh, U Singisetti Journal of Applied Physics 124 (8), 2018 | 132 | 2018 |
| Device-level thermal management of gallium oxide field-effect transistors B Chatterjee, K Zeng, CD Nordquist, U Singisetti, S Choi IEEE Transactions on Components, Packaging and Manufacturing Technology 9 …, 2019 | 129 | 2019 |
| Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal K Ghosh, U Singisetti Applied Physics Letters 109 (7), 2016 | 125 | 2016 |
| Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009 | 116 | 2009 |
| Interface State Density in Atomic Layer Deposited SiO2/-Ga2O3() MOSCAPs K Zeng, Y Jia, U Singisetti IEEE Electron Device Letters 37 (7), 906-909, 2016 | 113 | 2016 |
| Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation G He, K Ghosh, U Singisetti, H Ramamoorthy, R Somphonsane, G Bohra, ... Nano letters 15 (8), 5052-5058, 2015 | 112 | 2015 |
| Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement K Ghosh, U Singisetti Journal of Materials Research 32 (22), 4142-4152, 2017 | 109 | 2017 |
| Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01) Y Jia, K Zeng, JS Wallace, JA Gardella, U Singisetti Applied Physics Letters 106 (10), 2015 | 106 | 2015 |
| Ultralow resistance in situ Ohmic contacts to InGaAs/InP U.Singisetti, M.A.Wistey, J.Zimmerman, B.Thibeault, A.Gossard, M.Rodwell Applied Physics Letters 93, 183502, 2008 | 96 | 2008 |
| A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti Applied Physics Express 12 (8), 081003, 2019 | 84 | 2019 |
| Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 75 | 2009 |
| 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2 A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ... Applied Physics Express 15 (6), 061001, 2022 | 69 | 2022 |
| Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ... IEEE Electron Device Letters 32 (2), 137-139, 2010 | 67 | 2010 |
