Stefano Larentis
Stefano Larentis
FA Engineer @ NXP Semiconductors
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Field-effect transistors and intrinsic mobility in ultra-thin MoSe< inf> 2</inf> layers
S Larentis, B Fallahazad, E Tutuc
Applied Physics Letters 101 (22), 223104-223104-4, 2012
van der Waals heterostructures with high accuracy rotational alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
S Larentis, F Nardi, S Balatti, DC Gilmer, D Ielmini
IEEE, 2012
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene
K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ...
Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part I: Experimental study
F Nardi, S Larentis, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 59 (9), 2461-2467, 2012
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 116 (8), 086601, 2016
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
S Balatti, S Larentis, DC Gilmer, D Ielmini
Advanced materials 25 (10), 1474-1478, 2013
Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures
S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ...
Nano letters 14 (4), 2039-2045, 2014
Band Alignment in WSe2–Graphene Heterostructures
K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ...
ACS nano 9 (4), 4527-4532, 2015
Complementary switching in oxide-based bipolar resistive-switching random memory
F Nardi, S Balatti, S Larentis, DC Gilmer, D Ielmini
IEEE transactions on electron devices 60 (1), 70-77, 2012
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer
HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 118 (24), 247701, 2017
Complementary switching in metal oxides: Toward diode-less crossbar RRAMs
F Nardi, S Balatti, S Larentis, D Ielmini
2011 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2011
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in
S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...
Physical Review B 97 (20), 201407, 2018
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 2014
Filament diffusion model for simulating reset and retention processes in RRAM
S Larentis, C Cagli, F Nardi, D Ielmini
Microelectronic Engineering 88 (7), 1119-1123, 2011
Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
M Yankowitz, S Larentis, K Kim, J Xue, D McKenzie, S Huang, M Paggen, ...
Nano letters 15 (3), 1925-1929, 2015
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures
K Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ...
Nano letters 18 (9), 5967-5973, 2018
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