Michael Yakimov
Michael Yakimov
Research scientist, SUNY polytechnic institute
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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ...
Applied physics letters 88 (2), 2006
Mitigation of perfluorosulfonic acid membrane chemical degradation using cerium and manganese ions
FD Coms, H Liu, JE Owejan
ECS transactions 16 (2), 1735, 2008
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ...
Materials Science and Engineering: B 135 (3), 272-276, 2006
Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals
D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ...
Nature Photonics 3 (11), 662-666, 2009
Self-aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ...
2006 International Electron Devices Meeting, 1-4, 2006
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium
V Tokranov, M Yakimov, A Katsnelson, M Lamberti, S Oktyabrsky
Applied physics letters 83 (5), 833-835, 2003
Complete voltage recovery in quantum dot solar cells due to suppression of electron capture
A Varghese, M Yakimov, V Tokranov, V Mitin, K Sablon, A Sergeev, ...
Nanoscale 8 (13), 7248-7256, 2016
Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer
A Greene, S Madisetti, P Nagaiah, M Yakimov, V Tokranov, R Moore, ...
Solid-state electronics 78, 56-61, 2012
Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer
HS Kim, I Ok, M Zhang, T Lee, F Zhu, L Yu, JC Lee, S Koveshnikov, ...
Applied Physics Letters 89 (22), 2006
Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces
DM Zhernokletov, H Dong, B Brennan, M Yakimov, V Tokranov, ...
Applied Physics Letters 102 (13), 2013
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate
V Tokranov, P Nagaiah, M Yakimov, RJ Matyi, S Oktyabrsky
Journal of crystal growth 323 (1), 35-38, 2011
Optically decoupled loss modulation in a duo-cavity VCSEL
J Van Eisden, M Yakimov, V Tokranov, M Varanasi, EM Mohammed, ...
IEEE Photonics Technology Letters 20 (1), 42-44, 2007
Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide
P Nagaiah, V Tokranov, M Yakimov, S Koveshnikov, S Oktyabrsky, ...
Journal of Vacuum Science & Technology B 28 (3), C3H5-C3H9, 2010
Control of Wigner localization and electron cavity effects in near-field emission spectra of In (Ga) P/GaInP quantum-dot structures
AM Mintairov, J Kapaldo, JL Merz, S Rouvimov, DV Lebedev, ...
Physical Review B 97 (19), 195443, 2018
Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide
S Koveshnikov, C Adamo, V Tokranov, M Yakimov, R Kambhampati, ...
Applied Physics Letters 93 (1), 2008
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition
IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, S Koveshnikov, W Tsai, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
Modulation properties of VCSEL with intracavity modulator
J Van Eisden, M Yakimov, V Tokranov, M Varanasi, EM Mohammed, ...
Vertical-Cavity Surface-Emitting Lasers XI 6484, 84-93, 2007
Dynamic control of AlGaN/GaN HEMT characteristics by implementation of a p-GaN body-diode-based back-gate
I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ...
IEEE Journal of the Electron Devices Society 7, 581-588, 2019
Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures
S Oktyabrsky, M Lamberti, V Tokranov, G Agnello, M Yakimov
Journal of applied physics 98 (5), 2005
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