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Miotkowski
Miotkowski
senior research scientist
Verified email at purdue.edu
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Cited by
Cited by
Year
Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
Y Xu, I Miotkowski, C Liu, J Tian, H Nam, N Alidoust, J Hu, CK Shih, ...
Nature Physics 10 (12), 956-963, 2014
4792014
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, I Miotkowski, ...
Physical Review Letters 85 (7), 1552, 2000
2892000
Ultrafast Surface Carrier Dynamics in the Topological Insulator Bi2Te3
M Hajlaoui, E Papalazarou, J Mauchain, G Lantz, N Moisan, D Boschetto, ...
Nano letters 12 (7), 3532-3536, 2012
2582012
Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriers
H Cao, J Tian, I Miotkowski, T Shen, J Hu, S Qiao, YP Chen
Physical Review Letters, 2012
2182012
Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals from 10 K to 270 K
X Chen, HD Zhou, A Kiswandhi, I Miotkowski, YP Chen, PA Sharma, ...
Applied Physics Letters 99 (26), 2011
1542011
Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
J Qi, X Chen, W Yu, P Cadden-Zimansky, D Smirnov, NH Tolk, ...
Applied Physics Letters 97 (18), 2010
1472010
Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se
J Tian, I Miotkowski, S Hong, YP Chen
Scientific reports 5 (1), 14293, 2015
1432015
Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry
M Hajlaoui, E Papalazarou, J Mauchain, L Perfetti, A Taleb-Ibrahimi, ...
Nature communications 5 (1), 3003, 2014
1272014
Temperature dependence of Raman-active optical phonons in Bi2Se3 and Sb2Te3
Y Kim, X Chen, Z Wang, J Shi, I Miotkowski, YP Chen, PA Sharma, ...
Applied Physics Letters 100 (7), 2012
1142012
Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators
Y Xu, I Miotkowski, YP Chen
Nature Communications 7 (1), 11434, 2016
1042016
Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery
J Tian, S Hong, I Miotkowski, S Datta, YP Chen
Science Advances 3 (4), e1602531, 2017
922017
Origin of the large band-gap bowing in highly mismatched semiconductor alloys
J Wu, W Walukiewicz, KM Yu, JW Ager III, EE Haller, I Miotkowski, ...
Physical Review B 67 (3), 035207, 2003
892003
Topological insulator based spin valve devices: Evidence for spin polarized transport of spin-momentum-locked topological surface states
J Tian, I Childres, H Cao, T Shen, I Miotkowski, YP Chen
Solid State Communications 191, 1-5, 2014
882014
Mapping the 3D surface potential in Bi2Se3
C Mann, D West, I Miotkowski, YP Chen, S Zhang, CK Shih
Nature communications 4 (1), 2277, 2013
732013
Magnetization of bound magnetic polarons: direct determination via photomemory effect
T Wojtowicz, S Koleśnik, I Miotkowski, JK Furdyna
Physical review letters 70 (15), 2317, 1993
591993
Oxygen isoelectronic impurities in ZnTe: Photoluminescence and absorption spectroscopy
MJ Seong, I Miotkowski, AK Ramdas
Physical Review B 58 (12), 7734, 1998
581998
Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
H Cao, S Xu, I Miotkowski, J Tian, D Pandey, MZ Hasan, YP Chen
physica status solidi (RRL)–Rapid Research Letters 7 (1‐2), 133-135, 2013
562013
Magnetic measurements on the III-VI diluted magnetic semiconductor
TM Pekarek, BC Crooker, I Miotkowski, AK Ramdas
Journal of applied physics 83 (11), 6557-6559, 1998
551998
Optical properties of Mg-based II-VI ternaries and quaternaries: Cd 1− x Mg x Te and Cd 1− x− y Mg x Mn y Te
E Oh, C Parks, I Miotkowski, MD Sciacca, AJ Mayur, AK Ramdas
Physical Review B 48 (20), 15040, 1993
531993
Differentiation of surface and bulk conductivities in topological insulators via four-probe spectroscopy
C Durand, XG Zhang, SM Hus, C Ma, MA McGuire, Y Xu, H Cao, ...
Nano letters 16 (4), 2213-2220, 2016
492016
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