Follow
Alan Seabaugh
Alan Seabaugh
Professor of Electrical Engineering, University of Notre Dame
Verified email at nd.edu - Homepage
Title
Cited by
Cited by
Year
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
32362014
Low-voltage tunnel transistors for beyond CMOS logic
AC Seabaugh, Q Zhang
Proceedings of the IEEE 98 (12), 2095-2110, 2010
18622010
Low-subthreshold-swing tunnel transistors
Q Zhang, W Zhao, A Seabaugh
IEEE Electron Device Letters 27 (4), 297-300, 2006
7622006
Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh
IEEE Journal of the Electron Devices Society 2 (4), 44-49, 2014
6772014
High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ...
Applied Physics Letters 104 (20), 2014
3912014
Direct extraction of the electron tunneling effective mass in ultrathin SiO2
B Brar, GD Wilk, AC Seabaugh
Applied physics letters 69 (18), 2728-2730, 1996
3801996
Device and architecture outlook for beyond CMOS switches
K Bernstein, RK Cavin, W Porod, A Seabaugh, J Welser
Proceedings of the IEEE 98 (12), 2169-2184, 2010
3722010
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
3572015
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied physics letters 101 (1), 2012
3092012
Graphene nanoribbon tunnel transistors
Q Zhang, T Fang, H Xing, A Seabaugh, D Jena
IEEE Electron Device Letters 29 (12), 1344-1346, 2008
2972008
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
TPE Broekaert, B Brar, JPA van der Wagt, AC Seabaugh, FJ Morris, ...
IEEE Journal of Solid-State Circuits 33 (9), 1342-1349, 1998
2751998
RTD/HFET low standby power SRAM gain cell
JPA Van Der Wagt, AC Seabaugh, EA Beam
IEEE Electron Device Letters 19 (1), 7-9, 1998
2591998
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 2012
2212012
Exfoliated multilayer MoTe2 field-effect transistors
S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ...
Applied Physics Letters 105 (19), 2014
2062014
Nanomechanical switches and circuits
GA Frazier, AC Seabaugh
US Patent 6,548,841, 2003
2062003
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
2051998
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
1812012
Silicon oxide resonant tunneling diode structure
RM Wallace, AC Seabaugh
US Patent 5,606,177, 1997
1701997
Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh
Applied physics letters 54 (11), 1034-1036, 1989
1681989
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V
R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
1642012
The system can't perform the operation now. Try again later.
Articles 1–20