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Zhaoqiang Bai
Zhaoqiang Bai
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Title
Cited by
Cited by
Year
Data storage: review of Heusler compounds
Z Bai, LEI Shen, G Han, YP Feng
Spin 2 (04), 1230006, 2012
1012012
Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
K Aryana, JT Gaskins, J Nag, DA Stewart, Z Bai, S Mukhopadhyay, ...
Nature communications 12 (1), 774, 2021
832021
Magnetic and transport properties of Mn3− xGa/MgO/Mn3− xGa magnetic tunnel junctions: A first-principles study
Z Bai, Y Cai, L Shen, M Yang, V Ko, G Han, Y Feng
Applied Physics Letters 100 (2), 2012
652012
Constructing metallic nanoroads on a MoS 2 monolayer via hydrogenation
Y Cai, Z Bai, H Pan, YP Feng, BI Yakobson, YW Zhang
Nanoscale 6 (3), 1691-1697, 2014
582014
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin-conductance mismatch
Q Wu, L Shen, Z Bai, M Zeng, M Yang, Z Huang, YP Feng
Physical Review Applied 2 (4), 044008, 2014
522014
Transition metal atoms pathways on rutile TiO2 (110) surface: Distribution of Ti3+ states and evidence of enhanced peripheral charge accumulation
Y Cai, Z Bai, S Chintalapati, Q Zeng, YP Feng
The Journal of chemical physics 138 (15), 2013
522013
Magnetocrystalline anisotropy and its electric-field-assisted switching of Heusler-compound-based perpendicular magnetic tunnel junctions
Z Bai, L Shen, Y Cai, Q Wu, M Zeng, G Han, YP Feng
New Journal of Physics 16 (10), 103033, 2014
482014
Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctions
Z Bai, L Shen, Q Wu, M Zeng, JS Wang, G Han, YP Feng
Physical Review B—Condensed Matter and Materials Physics 87 (1), 014114, 2013
482013
Transport properties of high-performance all-Heusler Co2CrSi/Cu2CrAl/Co2CrSi giant magnetoresistance device
ZQ Bai, YH Lu, L Shen, V Ko, GC Han, YP Feng
Journal of Applied Physics 111 (9), 2012
452012
Strain-Engineered Surface Transport in Si (001): Complete Isolation of the Surface<? format?> State via Tensile Strain
M Zhou, Z Liu, Z Wang, Z Bai, Y Feng, MG Lagally, F Liu
Physical Review Letters 111 (24), 246801, 2013
312013
Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO/Pt ferroelectic tunnel junctions
L Shen, T Zhou, Z Bai, M Zeng, JQ Goh, Z Yuan, G Han, B Liu, YP Feng
Physical Review B—Condensed Matter and Materials Physics 85 (6), 064105, 2012
282012
High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfaces
Z Bai, Y Cai, L Shen, G Han, Y Feng
Applied Physics Letters 102 (15), 2013
202013
Stark effect and nonlinear impedance of the asymmetric Ag-CO-Ag junction: An optical rectenna
HY He, ST Pi, ZQ Bai, M Banik, VA Apkarian, RQ Wu
The Journal of Physical Chemistry C 120 (37), 20914-20921, 2016
162016
First-principles study of the effect of BiGa heteroantisites in GaAs: Bi alloy
D Li, M Yang, S Zhao, Y Cai, Y Lu, Z Bai, Y Feng
Computational materials science 63, 178-181, 2012
142012
Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction
Y Cai, Z Bai, M Yang, YP Feng
Europhysics Letters 99 (3), 37001, 2012
142012
Phase change memory device with reduced read disturb and method of making the same
M Grobis, BAI Zhaoqiang, W Parkinson
US Patent 10,622,063, 2020
102020
Phase change memory device with crystallization template and method of making the same
BAI Zhaoqiang, M Apodaca, M Grobis, MNA Tran, NL Robertson, ...
US Patent 10,868,245, 2020
62020
Threshold switch for memory
F Nardi, MC Wu, T Minvielle, BAI Zhaoqiang
US Patent 10,943,952, 2021
52021
Set/reset methods for crystallization improvement in phase change memories
BAI Zhaoqiang, MD Apodaca, MK Grobis, MNA Tran, NL Robertson, ...
US Patent 10,839,897, 2020
42020
Heat-assisted magnetic recording (HAMR) medium with improved corrosion resistance
H Yuan, PC Dorsey, F Zong, SA Pirzada, AJ Bourez, BAI Zhaoqiang
US Patent 10,650,854, 2020
32020
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