David Scanlon
David Scanlon
Chair in Computational Chemistry at University of Birmingham
Verified email at - Homepage
Cited by
Cited by
Band alignment of rutile and anatase TiO2
DO Scanlon, CW Dunnill, J Buckeridge, SA Shevlin, AJ Logsdail, ...
Nature materials 12 (9), 798, 2013
On the application of the tolerance factor to inorganic and hybrid halide perovskites: a revised system
W Travis, ENK Glover, H Bronstein, DO Scanlon, RG Palgrave
Chemical science 7 (7), 4548-4556, 2016
Self‐regulation mechanism for charged point defects in hybrid halide perovskites
A Walsh, DO Scanlon, S Chen, XG Gong, SH Wei
Angewandte Chemie 127 (6), 1811-1814, 2015
Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2
DO Scanlon, GW Watson, DJ Payne, GR Atkinson, RG Egdell, DSL Law
The Journal of Physical Chemistry C 114 (10), 4636-4645, 2010
Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6
AE Maughan, AM Ganose, MM Bordelon, EM Miller, DO Scanlon, ...
Journal of the American Chemical Society 138 (27), 8453-8464, 2016
Can Pb-free halide double perovskites support high-efficiency solar cells?
CN Savory, A Walsh, DO Scanlon
ACS energy letters 1 (5), 949-955, 2016
Beyond methylammonium lead iodide: prospects for the emergent field of ns 2 containing solar absorbers
AM Ganose, CN Savory, DO Scanlon
Chemical Communications 53 (1), 20-44, 2017
n-Type doped transparent conducting binary oxides: an overview
SC Dixon, DO Scanlon, CJ Carmalt, IP Parkin
Journal of Materials Chemistry C 4 (29), 6946-6961, 2016
sumo: Command-line tools for plotting and analysis of periodic* ab initio* calculations
AM Ganose, AJ Jackson, DO Scanlon
Journal of Open Source Software 3 (28), 717, 2018
Acceptor Levels in -Type : Rationalizing Theory and Experiment
DO Scanlon, BJ Morgan, GW Watson, A Walsh
Physical review letters 103 (9), 096405, 2009
Interplay of orbital and relativistic effects in bismuth oxyhalides: BiOF, BiOCl, BiOBr, and BiOI
AM Ganose, M Cuff, KT Butler, A Walsh, DO Scanlon
Chemistry of materials 28 (7), 1980-1984, 2016
Controlling bulk conductivity in topological insulators: key role of anti-site defects
DO Scanlon, PDC King, RP Singh, A De La Torre, SMK Walker, ...
arXiv preprint arXiv:1204.4063, 2012
Bismuth oxyhalides: synthesis, structure and photoelectrochemical activity
DS Bhachu, SJA Moniz, S Sathasivam, DO Scanlon, A Walsh, ...
Chemical Science 7 (8), 4832-4841, 2016
An ab initio Study of Reduction of V2O5 through the Formation of Oxygen Vacancies and Li Intercalation
DO Scanlon, A Walsh, BJ Morgan, GW Watson
The Journal of Physical Chemistry C 112 (26), 9903-9911, 2008
Band gap and work function tailoring of SnO 2 for improved transparent conducting ability in photovoltaics
AM Ganose, DO Scanlon
Journal of Materials Chemistry C 4 (7), 1467-1475, 2016
Defect engineering of BaSnO 3 for high-performance transparent conducting oxide applications
DO Scanlon
Physical Review B 87 (16), 161201, 2013
Sources of conductivity and doping limits in CdO from hybrid density functional theory
M Burbano, DO Scanlon, GW Watson
Journal of the American Chemical Society 133 (38), 15065-15072, 2011
Role of Lattice Distortions in the Oxygen Storage Capacity of Divalently Doped CeO2
AB Kehoe, DO Scanlon, GW Watson
Chemistry of materials 23 (20), 4464-4468, 2011
Understanding the p-type defect chemistry of CuCrO 2
DO Scanlon, GW Watson
Journal of Materials Chemistry 21 (11), 3655-3663, 2011
On the possibility of p-type SnO 2
DO Scanlon, GW Watson
Journal of Materials Chemistry 22 (48), 25236-25245, 2012
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