Zheng Yang
Cited by
Cited by
P-type polar transition of chemically doped multilayer MoS2 transistor
X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
arXiv preprint arXiv:1604.08162, 2015
A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction
Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ...
Advanced Materials 31 (25), 1808231, 2019
Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil
M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ...
Nature nanotechnology 15 (4), 289-295, 2020
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil
M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ...
Acs Nano 12 (6), 6117-6127, 2018
Three-dimensional hierarchically porous MoS2 foam as high-rate and stable lithium-ion battery anode
X Wei, CC Lin, C Wu, N Qaiser, Y Cai, AY Lu, K Qi, JH Fu, YH Chiang, ...
nature communications 13 (1), 6006, 2022
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering
F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ...
Advanced Functional Materials 27 (4), 1604025, 2017
Impact ionization by hot carriers in a black phosphorus field effect transistor
F Ahmed, YD Kim, Z Yang, P He, E Hwang, H Yang, J Hone, WJ Yoo
Nature communications 9 (1), 3414, 2018
Resonant tunnelling diodes based on twisted black phosphorus homostructures
PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ...
Nature Electronics 4 (4), 269-276, 2021
Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions
SB Mitta, F Ali, Z Yang, I Moon, F Ahmed, TJ Yoo, BH Lee, WJ Yoo
ACS applied materials & interfaces 12 (20), 23261-23271, 2020
Dielectric dispersion and high field response of multilayer hexagonal boron nitride
F Ahmed, S Heo, Z Yang, F Ali, CH Ra, HI Lee, T Taniguchi, J Hone, ...
Advanced Functional Materials 28 (40), 1804235, 2018
Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts
TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ...
Advanced Electronic Materials 7 (5), 2001212, 2021
High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2
C Kim, S Issarapanacheewin, I Moon, KY Lee, C Ra, S Lee, Z Yang, ...
Advanced Electronic Materials 6 (3), 1900964, 2020
Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping
TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo
Advanced Electronic Materials 6 (10), 2000616, 2020
Graphdiyne-based nanofilms for compliant on-skin sensing
Y Cai, J Shen, JH Fu, N Qaiser, C Chen, CC Tseng, M Hakami, Z Yang, ...
ACS nano 16 (10), 16677-16689, 2022
Energy dissipation in black phosphorus heterostructured devices
F Ali, F Ahmed, Z Yang, I Moon, M Lee, Y Hassan, C Lee, WJ Yoo
Advanced Materials Interfaces 6 (2), 1801528, 2019
Electronic device including 2-dimensional material
S Park, J Lee, RA Changho, YOO Wonjong, F Ahmed, Z Yang, ...
US Patent 10,269,975, 2019
Electronic device including two-dimensional material
NAM Seunggeol, YOO Wonjong, Z Yang
US Patent 10,516,054, 2019
Achieving High Performance Ambipolar MoS₂ One-Dimensional Electrical Contact FET Through Plasma Etching
Z Yang, WJ Yoo
한국표면공학회 학술발표회 초록집, 45-45, 2017
Depin MoS2 Fermi Level via One-Dimensional Contact
Z Yang, CH Ra, WJ Yoo
APS March Meeting Abstracts 2017, V1. 009, 2017
One-Dimensional Electrical Contact to Molybdenum Disulfide
Z Yang, C Ra, F Ahmed, D Lee, M Choi, X Liu, D Qu, WJ Yoo
APS March Meeting Abstracts 2016, C26. 010, 2016
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