Inyong Moon
Inyong Moon
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Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ...
ACS nano 11 (2), 1588-1596, 2017
Colossal grain growth yields single-crystal metal foils by contact-free annealing
S Jin, M Huang, Y Kwon, L Zhang, BW Li, S Oh, J Dong, D Luo, M Biswal, ...
Science 362 (6418), 1021-1025, 2018
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions
SB Mitta, F Ali, Z Yang, I Moon, F Ahmed, TJ Yoo, BH Lee, WJ Yoo
ACS applied materials & interfaces 12 (20), 23261-23271, 2020
Fermi‐level pinning free high‐performance 2D CMOS inverter fabricated with van der Waals bottom contacts
TD Ngo, Z Yang, M Lee, F Ali, I Moon, DG Kim, T Taniguchi, K Watanabe, ...
Advanced Electronic Materials 7 (5), 2001212, 2021
High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2
C Kim, S Issarapanacheewin, I Moon, KY Lee, C Ra, S Lee, Z Yang, ...
Advanced Electronic Materials 6 (3), 1900964, 2020
The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment
I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ...
Nanoscale 11 (37), 17368-17375, 2019
Effect of large work function modulation of MoS 2 by controllable chlorine doping using a remote plasma
KH Kim, KS Kim, YJ Ji, I Moon, K Heo, DH Kang, KN Kim, WJ Yoo, ...
Journal of Materials Chemistry C 8 (5), 1846-1851, 2020
Laser edge isolation for high-efficiency crystalline silicon solar cells
D Kyeong, M Gunasekaran, K Kim, T Kwon, I Moon, Y Kim, K Han, J Yi
Journal of the Korean Physical Society 55 (1), 124-128, 2009
Control of the Schottky Barrier and Contact Resistance at Metal–WSe2 Interfaces by Polymeric Doping
TD Ngo, M Lee, Z Yang, F Ali, I Moon, WJ Yoo
Advanced Electronic Materials 6 (10), 2000616, 2020
Selective emitter using porous silicon for crystalline silicon solar cells
I Moon, K Kim, M Thamilselvan, Y Kim, K Han, D Kyeong, T Kwon, DV Ai, ...
Solar energy materials and solar cells 93 (6-7), 846-850, 2009
Metallic contact induced van der Waals gap in a MoS 2 FET
C Kim, KY Lee, I Moon, S Issarapanacheewin, WJ Yoo
Nanoscale 11 (39), 18246-18254, 2019
Energy dissipation in black phosphorus heterostructured devices
F Ali, F Ahmed, Z Yang, I Moon, M Lee, Y Hassan, C Lee, WJ Yoo
Advanced Materials Interfaces 6 (2), 1801528, 2019
Novel approaches for tri-crystalline silicon surface texturing
K Han, M Thamilselvan, K Kim, M Ju, YK Kim, I Moon, K Lee, D Kyung, ...
Solar energy materials and solar cells 93 (6-7), 1042-1046, 2009
Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors
I Moon, MS Choi, S Lee, A Nipane, J Hone, WJ Yoo
2D Materials 8 (4), 045019, 2021
Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors
S Lee, H Choi, I Moon, H Shin, K Watanabe, T Taniguchi, WJ Yoo
Advanced Electronic Materials 8 (5), 2101169, 2022
Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping
TD Ngo, T Huynh, I Moon, T Taniguchi, K Watanabe, MS Choi, WJ Yoo
Nano Letters 23 (23), 11345-11352, 2023
Contact Doped Multi-layer Tungsten Diselenide Field Effect Transistors
I Moon, S Lee, M Choi, WJ Yoo
Bulletin of the American Physical Society 65, 2020
Contact Oxidized Few layer p-type WSe2 Field Effect Transistors
I Moon, S Lee, M Choi, WJ Yoo
한국진공학회 학술발표회초록집, 151-151, 2020
Fermi level de-pinning by using one-dimensional edge contact to MoS2
C Kim, I Moon, K Lee, WJ Yoo
APS March Meeting Abstracts 2018, L37. 002, 2018
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