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Patricia Mooney
Patricia Mooney
Professor Emerita of Physics, Simon Fraser University
Verified email at sfu.ca
Title
Cited by
Cited by
Year
Deep donor levels (DX centers) in III‐V semiconductors
PM Mooney
Journal of Applied Physics 67 (3), R1-R26, 1990
10421990
Measurements of alloy composition and strain in thin GexSi1−x layers
JC Tsang, PM Mooney, F Dacol, JO Chu
Journal of applied physics 75 (12), 8098-8108, 1994
5731994
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ...
IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003
4272003
Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs
K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
4122002
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
PM Mooney, LJ Cheng, M Süli, JD Gerson, JW Corbett
Physical Review B 15 (8), 3836, 1977
3601977
Strained Si NMOSFETs for high performance CMOS technology
K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ...
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001
3462001
Controllable valley splitting in silicon quantum devices
S Goswami, KA Slinker, M Friesen, LM McGuire, JL Truitt, C Tahan, ...
Nature Physics 3 (1), 41-45, 2007
3392007
High speed composite p-channel Si/SiGe heterostructure for field effect devices
JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott
US Patent 6,350,993, 2002
2722002
Influence of misfit dislocations on the surface morphology of Si1−xGex films
MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu
Applied Physics Letters 66 (6), 724-726, 1995
2411995
Electron Localization by a Metastable Donor Level in n− GaAs: A New Mechanism Limiting the Free-Carrier Density
TN Theis, PM Mooney, SL Wright
Physical review letters 60 (4), 361, 1988
2211988
Energy dependence of deep level introduction in electron irradiated GaAs
D Pons, PM Mooney, JC Bourgoin
Journal of Applied Physics 51 (4), 2038-2042, 1980
2161980
Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ...
Journal of applied physics 62 (2), 632-643, 1987
1921987
Strain relaxation and dislocations in SiGe/Si structures
PM Mooney
Materials Science and Engineering: R: Reports 17 (3), 105-146, 1996
1841996
Photo‐deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors
PM Mooney
Journal of applied physics 54 (1), 208-213, 1983
1791983
The capture barrier of the DX center in Si‐doped AlxGa1−xAs
PM Mooney, NS Caswell, SL Wright
Journal of applied physics 62 (12), 4786-4797, 1987
1781987
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ...
Physical review letters 73 (25), 3447, 1994
1771994
Raman scattering analysis of relaxed GexSi1−x alloy layers
PM Mooney, FH Dacol, JC Tsang, JO Chu
Applied Physics Letters 62 (17), 2069-2071, 1993
1711993
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
SH Christiansen, JO Chu, A Grill, PM Mooney
US Patent 6,593,625, 2003
1622003
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
SH Christiansen, A Grill, PM Mooney
US Patent 6,515,335, 2003
1502003
Spin-based quantum dot quantum computing in silicon
MA Eriksson, M Friesen, SN Coppersmith, R Joynt, LJ Klein, K Slinker, ...
Quantum Information Processing 3, 133-146, 2004
1462004
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