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Won Jong Yoo
Won Jong Yoo
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Title
Cited by
Cited by
Year
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
12152013
High-performance perovskite-graphene hybrid photodetector.
Y Lee, J Kwon, E Hwang, CH Ra, WJ Yoo, JH Ahn, JH Park, JH Cho
Advanced Materials (Deerfield Beach, Fla.) 27 (1), 41-46, 2014
8642014
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
M Sup Choi, GH Lee, YJ Yu, DY Lee, S Hwan Lee, P Kim, J Hone, ...
Nature communications 4 (1), 1624, 2013
7492013
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ...
ACS nano 11 (2), 1588-1596, 2017
7452017
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo
ACS nano 8 (9), 9332-9340, 2014
5672014
Highly stretchable piezoelectric‐pyroelectric hybrid nanogenerator
JH Lee, KY Lee, MK Gupta, TY Kim, DY Lee, J Oh, C Ryu, WJ Yoo, ...
Advanced Materials 26 (5), 765-769, 2014
5672014
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
3502015
P-type polar transition of chemically doped multilayer MoS2 transistor
X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
arXiv preprint arXiv:1604.08162, 2015
2412015
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
2142019
Colossal grain growth yields single-crystal metal foils by contact-free annealing
S Jin, M Huang, Y Kwon, L Zhang, BW Li, S Oh, J Dong, D Luo, M Biswal, ...
Science 362 (6418), 1021-1025, 2018
2032018
A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction
Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ...
Advanced Materials 31 (25), 1808231, 2019
1982019
Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2
D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo
Advanced Materials 29 (39), 1606433, 2017
1862017
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
1832017
Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil
M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ...
Nature nanotechnology 15 (4), 289-295, 2020
1822020
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance
JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ...
IEEE transactions on electron devices 51 (11), 1840-1848, 2004
1572004
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil
M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ...
Acs Nano 12 (6), 6117-6127, 2018
1512018
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
X Zheng, A CalÚ, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ...
Nature Electronics 2 (1), 17-25, 2019
1392019
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4 (1), 4041, 2014
1392014
Electrical characterization of 2D materials-based field-effect transistors
SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo
2D Materials 8 (1), 012002, 2020
1342020
Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode
S Zhu, HY Yu, SJ Whang, JH Chen, C Shen, C Zhu, SJ Lee, MF Li, ...
IEEE Electron Device Letters 25 (5), 268-270, 2004
1202004
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Articles 1–20