Yi (Alice) Wu
Yi (Alice) Wu
Ph. D., Electrical Engineering, Stanford University
Verified email at - Homepage
Cited by
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Metal–Oxide RRAM
HSP Wong, HY Lee, S Yu, YS Chen, Y Wu, PS Chen, B Lee, FT Chen, ...
An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong
IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
S Yu, Y Wu, HSP Wong
Applied Physics Letters 98 (10), 2011
A compact model for metal–oxide resistive random access memory with experiment verification
Z Jiang, Y Wu, S Yu, L Yang, K Song, Z Karim, HSP Wong
IEEE Transactions on Electron Devices 63 (5), 1884-1892, 2016
-Based RRAM Using Atomic Layer Deposition (ALD) With 1- RESET Current
Y Wu, B Lee, HP Wong
Electron Device Letters, IEEE 31 (12), 1449-1451, 2010
Verilog-A compact model for oxide-based resistive random access memory (RRAM)
Z Jiang, S Yu, Y Wu, JH Engel, X Guan, HSP Wong
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
Y Wu, S Yu, B Lee, P Wong
Journal of Applied Physics 110 (9), 2011
Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model
H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ...
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015
Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon
Y Chai, Y Wu, K Takei, HY Chen, S Yu, PCH Chan, A Javey, HSP Wong
IEEE transactions on electron devices 58 (11), 3933-3939, 2011
AlOx-based resistive switching device with gradual resistance modulation for neuromorphic device application
Y Wu, S Yu, HSP Wong, YS Chen, HY Lee, SM Wang, PY Gu, F Chen, ...
2012 4th IEEE international memory workshop, 1-4, 2012
Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays
S Yu, J Liang, Y Wu, HSP Wong
Nanotechnology 21 (46), 465202, 2010
Nanometer-Scale RRAM
Z Zhang, Y Wu, HSP Wong, SS Wong
IEEE electron device letters 34 (8), 1005-1007, 2013
Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices
S Yu, Y Wu, Y Chai, J Provine, HSP Wong
Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011
Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO 2
S Yu, R Jeyasingh, Y Wu, HSP Wong
Physical Review B 85 (4), 045324, 2012
Ultra-low power Al2O3-based RRAM with 1μA reset current
Y Wu, B Lee, HSP Wong
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International …, 2010
AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
S Yu, R Jeyasingh, Y Wu, HS Philip Wong
Applied Physics Letters 99 (23), 2011
Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis
S Yu, R Jeyasingh, Y Wu, HSP Wong
2011 International Electron Devices Meeting, 12.1. 1-12.1. 4, 2011
Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application
Y Wu, Y Chai, HY Chen, S Yu, HSP Wong
2011 Symposium on VLSI Technology-Digest of Technical Papers, 26-27, 2011
Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)
HSP Wong, SB Kim, B Lee, MA Caldwell, J Liang, Y Wu, RGD Jeyasingh, ...
2010 10th IEEE International Conference on Solid-State and Integrated …, 2010
Comparison analysis of 1D/2D/3D neutronics modeling for a fusion reactor
J Li, Q Zeng, M Chen, J Jiang, S Zheng, FDS Team
Fusion Engineering and Design 83 (10-12), 1678-1682, 2008
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