Kevin Matney
Kevin Matney
Jordan Valley Semiconductor
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Cited by
Cited by
Characterization of structures from X-ray scattering data using genetic algorithms
M Wormington, C Panaccione, KM Matney, DK Bowen
Philosophical Transactions of the Royal Society of London. Series A …, 1999
Fitting of X-ray scattering data using evolutionary algorithms
M Wormington, C Panaccione, KM Matney, DK Bowen
US Patent 6,192,103, 2001
Processing technologies for advanced Ge devices
R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ...
ECS Journal of Solid State Science and Technology 6 (1), P14, 2016
Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
J Li, S Iyer, S Bharatan, L Wu, K Nunna, W Collis, KK Bajaj, K Matney
Journal of applied physics 98 (1), 2005
MBE growth and properties of GaAsSbN/GaAs single quantum wells
L Wu, S Iyer, K Nunna, J Li, S Bharatan, W Collis, K Matney
Journal of crystal growth 279 (3-4), 293-302, 2005
The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN∕ GaAs grown by molecular beam epitaxy
S Bharatan, S Iyer, K Nunna, WJ Collis, K Matney, J Reppert, AM Rao, ...
Journal of Applied Physics 102 (2), 2007
Effect of substrate miscut on the structural properties of InGaAs linear graded buffer layers grown by molecular‐beam epitaxy on GaAs
JW Eldredge, KM Matney, MS Goorsky, HC Chui, JS Harris Jr
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC
B Poust, B Heying, S Hayashi, R Ho, K Matney, R Sandhu, M Wojtowicz, ...
Journal of Physics D: Applied Physics 38 (10A), A93, 2005
Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells
S Iyer, L Wu, J Li, S Potoczny, K Matney, PRC Kent
Journal of applied physics 101 (11), 2007
Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1− xGex/Si fin structures using x-ray reciprocal space maps
M Medikonda, GR Muthinti, J Fronheiser, V Kamineni, M Wormington, ...
Journal of Vacuum Science & Technology B 32 (2), 2014
Reciprocal space mapping for semiconductor substrates and device heterostructures
MS Goorsky, KM Matney, M Meshkinpour, DC Streit, TR Block
Il Nuovo Cimento D 19, 257-266, 1997
Characterization of buried pseudomorphic InGaAs layers using high‐resolution x‐ray diffraction
M Meshkinpour, MS Goorsky, KM Matney, DC Streit, TR Block
Journal of applied physics 76 (6), 3362-3366, 1994
Preservation of rectangular-patterned InP gratings overgrown by gas source molecular beam epitaxy
EM Koontz, MH Lim, VV Wong, GS Petrich, LA Kolodziejski, HI Smith, ...
Applied physics letters 71 (10), 1400-1402, 1997
Growth and properties of lattice matched GaAsSbN epilayer on GaAs for solar cell applications
S Bharatan, S Iyer, K Matney, WJ Collis, K Nunna, J Li, L Wu, K McGuire, ...
MRS Online Proceedings Library (OPL) 891, 0891-EE10-36, 2005
Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions
M Müllenborn, K Matney, MS Goorsky, NM Haegel, SM Vernon
Journal of applied physics 75 (5), 2418-2420, 1994
Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering
P Gin, M Wormington, Y Amasay, I Grinberg, A Brady, I Reichental, ...
Journal of Micro/Nanopatterning, Materials, and Metrology 22 (3), 031205-031205, 2023
Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis
K Matney, MS Goorsky
Journal of crystal growth 148 (4), 327-335, 1995
Image contrast in X-ray topography imaging for defect inspection
KM Matney, O Whear, RT Bytheway, JL Wall, M Wormington
US Patent 10,816,487, 2020
A new approach for determining epilayer strain relaxation and composition through high resolution X-ray diffraction
KM Matney, MS Goorsky
MRS Online Proceedings Library 379, 257-262, 1995
Materials characterization for process integration of multi-channel gate all around (GAA) devices
GR Muthinti, N Loubet, R Chao, AA de la Peņa, J Li, MA Guillorn, ...
Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017
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