Johan Swerts
Johan Swerts
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High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
2018 IEEE symposium on VLSI Circuits, 81-82, 2018
Manufacturable 300mm platform solution for field-free switching SOT-MRAM
K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
2019 Symposium on VLSI Circuits, T194-T195, 2019
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ...
2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013
Alternative metals for advanced interconnects
C Adelmann, LG Wen, AP Peter, YK Siew, K Croes, J Swerts, M Popovici, ...
IEEE International Interconnect Technology Conference, 173-176, 2014
Information not available
M Lange, MJ Van Bael, L Van Look, K Temst, J Swerts, G Guentherodt, ...
Europhys. Lett. 53, 646, 2001
Atomic layer deposition of strontium titanate films using Sr (# 2# 1Cp) 2 and Ti (OMe) 4
M Popovici, S Van Elshocht, N Menou, J Swerts, D Pierreux, A Delabie, ...
Journal of the Electrochemical Society 157 (1), G1, 2009
Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators
J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
S Sakhare, M Perumkunnil, TH Bao, S Rao, W Kim, D Crotti, F Yasin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.3. 1-18.3. 4, 2018
Composition influence on the physical and electrical properties of SrxTi1− xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom …
N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ...
Journal of Applied Physics 106 (9), 2009
Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
T Devolder, JV Kim, F Garcia-Sanchez, J Swerts, W Kim, S Couet, G Kar, ...
Physical Review B 93 (2), 024420, 2016
Remote plasma activated nitridation
J Swerts, H De Witte, JW Maes, CF Pomarede, R Haverkort, YM Wan, ...
US Patent 7,629,270, 2009
BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ...
Applied Physics Letters 106 (26), 2015
Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application
GS Kar, W Kim, T Tahmasebi, J Swerts, S Mertens, N Heylen, T Min
2014 IEEE International Electron Devices Meeting, 19.1. 1-19.1. 4, 2014
Atomic layer deposition of Gd-doped HfO2 thin films
C Adelmann, H Tielens, D Dewulf, A Hardy, D Pierreux, J Swerts, ...
Journal of The Electrochemical Society 157 (4), G105, 2010
Atomic layer deposition of ruthenium thin films from (ethylbenzyl)(1-ethyl-1, 4-cyclohexadienyl) Ru: Process characteristics, surface chemistry, and film properties
M Popovici, B Groven, K Marcoen¶, QM Phung, S Dutta, J Swerts, ...
Chemistry of Materials 29 (11), 4654-4666, 2017
Achieving Conduction Band-Edge Effective Work Functions byCapping of Hafnium Silicates
LA Ragnarsson, VS Chang, HY Yu, HJ Cho, T Conard, KM Yin, A Delabie, ...
IEEE electron device letters 28 (6), 486-488, 2007
Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping
S Couet, T Devolder, J Swerts, S Mertens, T Lin, E Liu, S Van Elshocht, ...
Applied Physics Letters 111 (15), 2017
Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics
S Van Elshocht, C Adelmann, T Conard, A Delabie, A Franquet, L Nyns, ...
Journal of Vacuum Science & Technology A 26 (4), 724-730, 2008
Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
J Swerts, N Peys, L Nyns, A Delabie, A Franquet, JW Maes, ...
Journal of The Electrochemical Society 157 (1), G26, 2009
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