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Gregor Mussler
Gregor Mussler
Verified email at fz-juelich.de
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Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
13242015
Optically pumped GeSn microdisk lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
2562016
Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3
L Braun, G Mussler, A Hruban, M Konczykowski, T Schumann, M Wolf, ...
Nature communications 7 (1), 13259, 2016
2192016
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 2013
1932013
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ...
Chemistry of Materials 27 (13), 4693-4702, 2015
1692015
Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown - and -Based Topological Insulators
P Olbrich, LE Golub, T Herrmann, SN Danilov, H Plank, VV Bel’Kov, ...
Physical review letters 113 (9), 096601, 2014
1522014
MBE growth optimization of topological insulator Bi2Te3 films
J Krumrain, G Mussler, S Borisova, T Stoica, L Plucinski, CM Schneider, ...
Journal of Crystal Growth 324 (1), 115-118, 2011
1222011
Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures
M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ...
Nature communications 6 (1), 8816, 2015
1102015
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ...
ACS photonics 2 (11), 1539-1545, 2015
1052015
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE photonics technology letters 26 (2), 187-189, 2013
1032013
Selective area growth and stencil lithography for in situ fabricated quantum devices
P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ...
Nature nanotechnology 14 (9), 825-831, 2019
992019
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ...
ECS Journal of Solid State Science and Technology 2 (5), N99, 2013
982013
Photon drag effect in three-dimensional topological insulators
H Plank, LE Golub, S Bauer, VV Bel'Kov, T Herrmann, P Olbrich, ...
Physical Review B 93 (12), 125434, 2016
942016
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ...
Optics express 24 (2), 1358-1367, 2016
942016
Tensely strained GeSn alloys as optical gain media
S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ...
Applied physics letters 103 (19), 2013
852013
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ...
Applied physics letters 103 (26), 2013
822013
Bi1Te1 is a dual topological insulator
M Eschbach, M Lanius, C Niu, E Młyńczak, P Gospodarič, J Kellner, ...
Nature communications 8 (1), 14976, 2017
792017
Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films
J Kampmeier, S Borisova, L Plucinski, M Luysberg, G Mussler, ...
Crystal growth & design 15 (1), 390-394, 2015
782015
Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates
S Borisova, J Krumrain, M Luysberg, G Mussler, D Grützmacher
Crystal growth & design 12 (12), 6098-6103, 2012
782012
Growth, characterization, and transport properties of ternary (Bi1− xSbx) 2Te3 topological insulator layers
C Weyrich, M Drögeler, J Kampmeier, M Eschbach, G Mussler, ...
Journal of Physics: Condensed Matter 28 (49), 495501, 2016
762016
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