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Co-authors
G J ShifletProfessor of Materials Science, University of VirginiaVerified email at virginia.edu- Terry TrittProfessor of Physics, Clemson UniversityVerified email at g.clemson.edu
- William L. JohnsonCalifornia Institute of TechnologyVerified email at caltech.edu
- Takeshi EgamiProfessor of Materials Science and Physics, University of TennesseeVerified email at utk.edu
- Jack SimonsonFarmingdale State CollegeVerified email at farmingdale.edu
- Wenjie XieTechnische Universität DarmstadtVerified email at mr.tu-darmstadt.de
- SA WolfUniversity of VirginiaVerified email at virginia.edu
- Despina LoucaProfessor of Physics, University of VirginiaVerified email at virginia.edu
- Jian HeClemson UniversityVerified email at clemson.edu
- Mircea R. StanVirginia Microelectronics Consortium (VMEC) Professor, University of VirginiaVerified email at virginia.edu
- J GopalakrishnanSolid State and structural Chemistry Unit, Indian Institute of Science, Bangalore, IndiaVerified email at iisc.ac.in
- Di WuShaanxi Normal University/Southern University of Science and Technology/University of VirginiaVerified email at snnu.edu.cn
- Eugene ChenSamsung, Grandis, Cypress Semiconductor, Motorola, NVEVerified email at samsung.com
- Xinfeng Tang (唐新峰)Wuhan University of TechnologyVerified email at whut.edu.cn
- Dmytro ApalkovSr. Principal Engineer/Sr. Director, Modeling, Samsung Semiconductor R&DVerified email at samsung.com
- anke weidenkaffTU DarmstadtVerified email at mr.tu-darmstadt.de
- Rama VenkatasubramanianJohns Hopkins University Applied Physics LabVerified email at jhuapl.edu
- Jiwei LuAFOSR
