Follow
Yong Chang
Title
Cited by
Cited by
Year
Effects of annealing in a partially reducing atmosphere on sputtered Al-doped ZnO thin films
C Lennon, RB Tapia, R Kodama, Y Chang, S Sivananthan, M Deshpande
Journal of electronic materials 38, 1568-1573, 2009
672009
Karst modelling challenge 1: Results of hydrological modelling
PY Jeannin, G Artigue, C Butscher, Y Chang, JB Charlier, L Duran, L Gill, ...
Journal of Hydrology 600, 126508, 2021
612021
Defect characterization for epitaxial HgCdTe alloys by electron microscopy
T Aoki, Y Chang, G Badano, J Zhao, C Grein, S Sivananthan, DJ Smith
Journal of crystal growth 265 (1-2), 224-234, 2004
572004
Surface morphology and defect formation mechanisms for HgCdTe (211) B grown by molecular beam epitaxy
Y Chang, CR Becker, CH Grein, J Zhao, C Fulk, T Casselman, R Kiran, ...
Journal of electronic materials 37, 1171-1183, 2008
552008
Effects of the conduit network on the spring hydrograph of the karst aquifer
Y Chang, J Wu, L Liu
Journal of Hydrology 527, 517-530, 2015
512015
Understanding ion-milling damage in Hg1− xCdxTe epilayers
C Wang, DJ Smith, S Tobin, T Parodos, J Zhao, Y Chang, S Sivananthan
Journal of Vacuum Science & Technology A 24 (4), 995-1000, 2006
512006
Identification of the dominant hydrological process and appropriate model structure of a karst catchment through stepwise simplification of a complex conceptual model
Y Chang, J Wu, G Jiang, Z Kang
Journal of Hydrology 548, 75-87, 2017
472017
Modelling spring discharge and solute transport in conduits by coupling CFPv2 to an epikarst reservoir for a karst aquifer
Y Chang, J Wu, G Jiang, L Liu, T Reimann, M Sauter
Journal of Hydrology 569, 587-599, 2019
442019
Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
Y Chang, CH Grein, J Zhao, CR Becker, ME Flatte, PK Liao, F Aqariden, ...
Applied physics letters 93 (19), 2008
412008
Electron microscopy of surface-crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular-beam epitaxy
T Aoki, Y Chang, G Badano, J Zhao, C Grein, S Sivananthan, DJ Smith
Journal of electronic materials 32, 703-709, 2003
412003
Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail
Y Chang, CH Grein, S Sivananthan, ME Flatte, V Nathan, S Guha
Applied physics letters 89 (6), 2006
402006
Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates
R Singh, S Velicu, J Crocco, Y Chang, J Zhao, LA Almeida, J Markunas, ...
Journal of electronic materials 34, 885-890, 2005
392005
Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy
Y Chang, G Badano, J Zhao, CH Grein, S Sivananthan, T Aoki, DJ Smith
Applied physics letters 83 (23), 4785-4787, 2003
392003
Far-infrared detector based on HgTe/HgCdTe superlattices
YD Zhou, CR Becker, Y Selamet, Y Chang, R Ashokan, RT Boreiko, ...
Journal of electronic materials 32, 608-614, 2003
392003
Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy
T Aoki, DJ Smith, Y Chang, J Zhao, G Badano, C Grein, S Sivananthan
Applied physics letters 82 (14), 2275-2277, 2003
392003
Near-bandgap infrared absorption properties of HgCdTe
Y Chang, G Badano, J Zhao, YD Zhou, R Ashokan, CH Grein, V Nathan
Journal of electronic materials 33, 709-713, 2004
372004
Modeling the hydrological behavior of a karst spring using a nonlinear reservoir-pipe model
Y Chang, J Wu, G Jiang
Hydrogeology Journal 23 (5), 901, 2015
342015
Modeling of recombination in HgCdTe
CH Grein, ME Flatte, Y Chang
Journal of electronic materials 37, 1415-1419, 2008
342008
HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection
Y Selamet, YD Zhou, J Zhao, Y Chang, CR Becker, R Ashokan, CH Grein, ...
Journal of electronic materials 33, 503-508, 2004
342004
Impact of surface treatment on the structural and electronic properties of polished CdZnTe surfaces for radiation detectors
S Tari, F Aqariden, Y Chang, C Grein, J Li, N Kioussis
Journal of electronic materials 42, 3252-3258, 2013
332013
The system can't perform the operation now. Try again later.
Articles 1–20