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Christopher A. Broderick
Christopher A. Broderick
Royal Society-Science Foundation Ireland University Research Fellow, University College Cork
Verified email at ucc.ie - Homepage
Title
Cited by
Cited by
Year
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
M Usman, CA Broderick, A Lindsay, EP O’Reilly
Physical Review B 84 (24), 245202, 2011
2672011
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
2052012
Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors
O Moutanabbir, S Assali, X Gong, EP O'Reilly, CA Broderick, B Marzban, ...
arXiv preprint arXiv:2101.03245, 2021
1132021
Impact of alloy disorder on the band structure of compressively strained GaBiAs
M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ...
Physical Review B 87 (11), 115104, 2013
932013
Derivation of 12-and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors
CA Broderick, M Usman, EP O'Reilly
Semiconductor Science and Technology 28 (12), 125025, 2013
882013
Optical gain in GaAsBi/GaAs quantum well diode lasers
IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ...
Scientific Reports 6, 28863, 2016
772016
Chapter 3: Theory of the electronic structure of dilute bismide alloys - tight-binding and k.p models
CA Broderick, M Usman, EP O’Reilly
Springer Series in Materials Science 186, 55, 2013
77*2013
Progress on germanium-tin nanoscale alloys
J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ...
Chemistry of Materials 32 (11), 4383-4408, 2020
482020
12‐band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations
CA Broderick, M Usman, EP O'Reilly
Physica Status Solidi B 250 (4), 773, 2013
432013
Determination of type-I band offsets in GaBiAs quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations
CA Broderick, PE Harnedy, P Ludewig, ZL Bushell, K Volz, RJ Manning, ...
Semiconductor Science and Technology 30 (9), 094009, 2015
382015
Anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ...
Physical Review B 90 (19), 195301, 2014
362014
Theory of the electronic and optical properties of dilute bismide quantum well lasers
CA Broderick, PE Harnedy, EP O'Reilly
IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 1503313, 2015
342015
GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics
CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ...
Scientific Reports 7, 46371, 2017
322017
Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys
EJ O’Halloran, CA Broderick, DSP Tanner, S Schulz, EP O’Reilly
Optical and Quantum Electronics 51 (9), 1-23, 2019
312019
Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with
GMT Chai, CA Broderick, EP O’Reilly, Z Othaman, SR Jin, JP Petropoulos, ...
Semiconductor Science and Technology 30 (9), 094015, 2015
232015
Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures
M Usman, CA Broderick, EP O’Reilly
Physical Review Applied 10 (4), 044024, 2018
212018
Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates
CA Broderick, W Xiong, SJ Sweeney, EP O'Reilly, JM Rorison
Semicond. Sci. Technol. 33, 094007, 2018
162018
Giant bowing of the band gap and spin-orbit splitting energy in GaPBi dilute bismide alloys
ZL Bushell, CA Broderick, L Nattermann, R Joseph, JL Keddie, ...
Scientific Reports 9, 6835, 2019
152019
Continuous-wave magneto-optical determination of the carrier lifetime in coherent GeSn/Ge heterostructures
E Vitiello, S Rossi, CA Broderick, G Gravina, A Balocchi, X Marie, ...
Physical Review Applied 14 (6), 064068, 2020
112020
Optical properties of metamorphic type-I InAsSb/AlInAs quantum wells grown on GaAs for the mid-infrared spectral range
E Repiso, CA Broderick, M de la Mata, R Arkani, Q Lu, ARJ Marshall, ...
Journal of Physics D: Applied Physics 52 (46), 465102, 2019
112019
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