Souriau Laurent
Souriau Laurent
Dry etch research engineer at imec
Verified email at
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Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
2018 IEEE symposium on VLSI Circuits, 81-82, 2018
Manufacturable 300mm platform solution for field-free switching SOT-MRAM
K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
2019 Symposium on VLSI Circuits, T194-T195, 2019
Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ...
Thin Solid Films 520 (8), 3211-3215, 2012
High quality Ge virtual substrates on Si wafers with standard STI patterning
R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax
Journal of The Electrochemical Society 157 (1), H13, 2009
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
G Wang, R Loo, E Simoen, L Souriau, M Caymax, MM Heyns, B Blanpain
Applied Physics Letters 94 (10), 2009
Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM
A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators
J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
Nanoscale domain wall devices with magnetic tunnel junction read and write
E Raymenants, O Bultynck, D Wan, T Devolder, K Garello, L Souriau, ...
Nature Electronics 4 (6), 392-398, 2021
Germanium: The past and possibly a future material for microelectronics
DP Brunco, B De Jaeger, G Eneman, A Satta, V Terzieva, L Souriau, ...
ECS Transactions 11 (4), 479, 2007
BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
J Swerts, S Mertens, T Lin, S Couet, Y Tomczak, K Sankaran, G Pourtois, ...
Applied Physics Letters 106 (26), 2015
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
A Veloso, G Hellings, MJ Cho, E Simoen, K Devriendt, V Paraschiv, ...
2015 Symposium on VLSI Technology (VLSI Technology), T138-T139, 2015
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
V Terzieva, L Souriau, M Caymax, DP Brunco, A Moussa, S Van Elshocht, ...
Thin Solid Films 517 (1), 172-177, 2008
Reducing EUV mask 3D effects by alternative metal absorbers
V Philipsen, KV Luong, L Souriau, E Hendrickx, A Erdmann, D Xu, ...
Extreme Ultraviolet (EUV) Lithography VIII 10143, 174-188, 2017
High-hole-mobility silicon germanium on insulator substrates with high crystalline quality obtained by the germanium condensation technique
L Souriau, T Nguyen, E Augendre, R Loo, V Terzieva, M Caymax, ...
Journal of the Electrochemical Society 156 (3), H208, 2009
Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge
R Loo, L Souriau, P Ong, K Kenis, J Rip, P Storck, T Buschhardt, ...
Journal of crystal growth 324 (1), 15-21, 2011
Selective epitaxial growth of germanium on Si wafers with shallow trench isolation: an approach for Ge virtual substrates
G Wang, FE Leys, L Souriau, R Loo, M Caymax, DP Brunco, J Geypen, ...
ECS Transactions 16 (10), 829, 2008
Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers
V Philipsen, KV Luong, L Souriau, A Erdmann, D Xu, P Evanschitzky, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (4), 041002-041002, 2017
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
G Wang, R Loo, S Takeuchi, L Souriau, JC Lin, A Moussa, H Bender, ...
Thin Solid Films 518 (9), 2538-2541, 2010
Characterization of threading dislocations in thin germanium layers by defect etching: Toward chromium and HF-free solution
L Souriau, T Atanasova, V Terzieva, A Moussa, M Caymax, R Loo, ...
Journal of The Electrochemical Society 155 (9), H677, 2008
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