Mihail Ion Lepsa
Mihail Ion Lepsa
Senior Scientist, Forschungszentrum Jülich GmbH, Germany
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Hall effect measurements on InAs nanowires
C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ...
Applied physics letters 101 (15), 2012
Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
T Rieger, S Heiderich, S Lenk, MI Lepsa, D Grützmacher
Journal of crystal growth 353 (1), 39-46, 2012
Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes
T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa
Nano letters 12 (11), 5559-5564, 2012
Electronic phase coherence in InAs nanowires
C Blomers, MI Lepsa, M Luysberg, D Grutzmacher, H Luth, T Schapers
Nano letters 11 (9), 3550-3556, 2011
Self-catalyzed VLS grown InAs nanowires with twinning superlattices
T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa
Nanotechnology 24 (33), 335601, 2013
Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ...
Nanotechnology 24 (3), 035203, 2012
Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
Ö Gül, N Demarina, C Blömers, T Rieger, H Lüth, MI Lepsa, ...
Physical Review B 89 (4), 045417, 2014
Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs
S Kuhlen, K Schmalbuch, M Hagedorn, P Schlammes, M Patt, M Lepsa, ...
arXiv preprint arXiv:1107.4307, 2011
Hot electron injector Gunn diode for advanced driver assistance systems
A Förster, MI Lepsa, D Freundt, J Stock, S Montanari
Applied Physics A 87, 545-558, 2007
Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy
T Rieger, D Grützmacher, MI Lepsa
Nanoscale 7 (1), 356-364, 2015
Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
T Rieger, MI Lepsa, T Schäpers, D Grützmacher
Journal of crystal growth 378, 506-510, 2013
Axial strain in GaAs/InAs core-shell nanowires
A Biermanns, T Rieger, G Bussone, U Pietsch, D Grützmacher, ...
Applied physics letters 102 (4), 2013
Nanoscale charge transport measurements using a double-tip scanning tunneling microscope
P Jaschinsky, J Wensorra, MI Lepsa, J Mysliveček, B Voigtländer
Journal of applied physics 104 (9), 2008
High frequency investigation of graded gap injectors for GaAs Gunn diodes
S Montanari, A Förster, MI Lepsa, H Lüth
Solid-state electronics 49 (2), 245-250, 2005
MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures
NA Güsken, T Rieger, P Zellekens, B Bennemann, E Neumann, MI Lepsa, ...
Nanoscale 9 (43), 16735-16741, 2017
Crystal phase selective growth in GaAs/InAs core–shell nanowires
T Rieger, T Schäpers, D Grützmacher, MI Lepsa
Crystal growth & design 14 (3), 1167-1174, 2014
Resonant tunneling in nanocolumns improved by quantum collimation
J Wensorra, KM Indlekofer, MI Lepsa, A Förster, H Lüth
Nano letters 5 (12), 2470-2475, 2005
Spin dynamics triggered by subterahertz magnetic field pulses
Z Wang, M Pietz, J Walowski, A Förster, MI Lepsa, M Münzenberg
Journal of applied physics 103 (12), 2008
Fabrication and characterisation of GaAs Gunn diode chips for applications at 77 GHz in automotive industry
A Förster, J Stock, S Montanari, MI Lepsa, H Lüth
Sensors 6 (4), 350-360, 2006
Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates
T Rieger, D Rosenbach, D Vakulov, S Heedt, T Schäpers, ...
Nano letters 16 (3), 1933-1941, 2016
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