MichaŽl Texier
MichaŽl Texier
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Sample preparation by focused ion beam micromachining for transmission electron microscopy imaging in front-view
M Jublot, M Texier
Micron 56, 63-67, 2014
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications
S Pizzini, M Acciarri, S Binetti, D Cavalcoli, A Cavallini, D Chrastina, ...
Materials Science and Engineering: B 134 (2-3), 118-124, 2006
Tungsten diffusion in silicon
A De Luca, A Portavoce, M Texier, C Grosjean, N Burle, V Oison, ...
Journal of Applied Physics 115 (1), 2014
Swelling and stacking fault formation in helium implanted SiC
JF Barbot, MF Beaufort, M Texier, C Tromas
Journal of nuclear materials 413 (3), 162-165, 2011
Low-temperature intrinsic plasticity in silicon at small scales
A Merabet, M Texier, C Tromas, S Brochard, L Pizzagalli, L Thilly, ...
Acta Materialia 161, 54-60, 2018
Structural characterization of nc-Si films grown by low-energy PECVD on different substrates
A Le Donne, S Binetti, G Isella, B Pichaud, M Texier, M Acciarri, S Pizzini
Applied Surface Science 254 (9), 2804-2808, 2008
Twin boundary migration in an individual platinum nanocrystal during catalytic CO oxidation
J Carnis, AR Kshirsagar, L Wu, M Dupraz, S Labat, M Texier, L Favre, ...
Nature communications 12 (1), 5385, 2021
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate
F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ...
Scripta Materialia 78, 9-12, 2014
Piezoelectric response and electrical properties of Pb (Zr1-xTix) O3 thin films: The role of imprint and composition
TW Cornelius, C Mocuta, S Escoubas, A Merabet, M Texier, EC Lima, ...
Journal of Applied Physics 122 (16), 2017
Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores
M Lancin, M Texier, G Regula, B Pichaud
Philosophical Magazine 89 (15), 1251-1266, 2009
Microstructure of icosahedral Al-Pd-Mn quasicrystals deformed at room temperature in an anisotropic confining medium
M Texier, A Proult, J Bonneville, J Rabier, N Baluc, P Cordier
Philosophical magazine letters 82 (12), 659-669, 2002
Silicide formation during reaction between Ni ultra-thin films and Si (0 0 1) substrates
J Fouet, M Texier, MI Richard, A Portavoce, D Mangelinck, C Guichet, ...
Materials Letters 116, 139-142, 2014
Optimum correction conditions for aberration-corrected HRTEM SiC dumbbells chemical imaging
M Texier, J Thibault-Pťnisson
Micron 43 (4), 516-523, 2012
On the yield point of icosahedral AlCuFe quasicrystals
M Texier, J Bonneville, A Proult, J Rabier, N Baluc, P Guyot
Scripta materialia 49 (1), 41-46, 2003
Microstructural analysis of i-AlPdMn quasi-crystals deformed between room temperature and 300į C under confining pressure
M Texier, A Proult, J Bonneville, J Rabier, N Baluc, P Cordier
Scripta materialia 49 (1), 47-52, 2003
Al–Pd–Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain
M Texier, A Joulain, J Bonneville, L Thilly, J Rabier
Philosophical Magazine 87 (10), 1497-1511, 2007
TEM characterization of dislocations and slip systems in stishovite deformed at 14 GPa, 1,300 C in the multianvil apparatus
M Texier, P Cordier
Physics and chemistry of minerals 33 (6), 394-402, 2006
Shear experiments under confining pressure conditions of Al–Pd–Mn single quasicrystals
M Texier, L Thilly, J Bonneville, A Proult, J Rabier
Materials Science and Engineering: A 400, 311-314, 2005
Mechanism of β-FeSi2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers
A De Luca, M Texier, A Portavoce, N Burle, C Grosjean, S Morata, ...
Journal of Applied Physics 117 (11), 2015
LACBED study of extended defects in 4H-SiC
M Texier, G Regula, M Lancin, B Pichaud
Philosophical magazine letters 86 (9), 529-537, 2006
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