Luigi Colombo
Cited by
Cited by
Large-area synthesis of high-quality and uniform graphene films on copper foils
X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ...
science 324 (5932), 1312-1314, 2009
A roadmap for graphene
KS Novoselov, L Colombo, PR Gellert, MG Schwab, K Kim
nature 490 (7419), 192-200, 2012
Transfer of large-area graphene films for high-performance transparent conductive electrodes
X Li, Y Zhu, W Cai, M Borysiak, B Han, D Chen, RD Piner, L Colombo, ...
Nano letters 9 (12), 4359-4363, 2009
Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage
F Bonaccorso, L Colombo, G Yu, M Stoller, V Tozzini, AC Ferrari, ...
Science 347 (6217), 1246501, 2015
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov, S Roche, P Bøggild, ...
Nanoscale 7 (11), 4598-4810, 2015
Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
Evolution of graphene growth on Ni and Cu by carbon isotope labeling
X Li, W Cai, L Colombo, RS Ruoff
Nano letters 9 (12), 4268-4272, 2009
Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper
X Li, CW Magnuson, A Venugopal, RM Tromp, JB Hannon, EM Vogel, ...
Journal of the American Chemical Society 133 (9), 2816-2819, 2011
Production and processing of graphene and 2d crystals
F Bonaccorso, A Lombardo, T Hasan, Z Sun, L Colombo, AC Ferrari
Materials today 15 (12), 564-589, 2012
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee
Applied Physics Letters 94 (6), 2009
Graphene films with large domain size by a two-step chemical vapor deposition process
X Li, CW Magnuson, A Venugopal, J An, JW Suk, B Han, M Borysiak, ...
Nano letters 10 (11), 4328-4334, 2010
The role of surface oxygen in the growth of large single-crystal graphene on copper
Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ...
Science 342 (6159), 720-723, 2013
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ...
Applied Physics Letters 99 (12), 2011
Handbook of semiconductor manufacturing technology
Y Nishi, R Doering
CRC press, 2000
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho
Applied Physics Letters 103 (5), 2013
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
C Gong, L Colombo, RM Wallace, K Cho
Nano letters 14 (4), 1714-1720, 2014
Application of HfSiON as a gate dielectric material
MR Visokay, JJ Chambers, ALP Rotondaro, A Shanware, L Colombo
Applied Physics Letters 80 (17), 3183-3185, 2002
Annealing of high-k dielectric materials
ALP Rotondaro, MR Visokay, L Colombo
US Patent 6,544,906, 2003
Process for manufacturing dual work function metal gates in a microelectronics device
L Colombo, JJ Chambers, MR Visokay
US Patent 7,229,873, 2007
Quantum engineering of transistors based on 2D materials heterostructures
G Iannaccone, F Bonaccorso, L Colombo, G Fiori
Nature nanotechnology 13 (3), 183-191, 2018
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