Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityVerified email at bu.edu
Anirban BhattacharyyaUniversity of CalcuttaVerified email at caluniv.ac.in
Hock M. NgOctopus Innovation PartnersVerified email at octoip.com
Karl LudwigProfessor of Physics, Boston UniversityVerified email at bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHVerified email at physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenVerified email at hzdr.de
Yitao LiaoBoston UniversityVerified email at bu.edu
Dimitris KorakakisVerified email at mail.wvu.edu
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaVerified email at unimib.it
Piotr PerlinInstitute of High Pressure PhysicsVerified email at unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesVerified email at ifpan.edu.pl
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityVerified email at bu.edu
Michał LeszczynskiVerified email at unipress.waw.pl
Wei ZhangBoston University Photonics CenterVerified email at physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonVerified email at bu.edu
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityVerified email at amat.com
Enrico BellottiBoston University Georgia Institute of TechnologyVerified email at bu.edu
HAIDING SUNProfessor of University of Science and Technology of ChinaVerified email at ustc.edu.cn
Emanuele Francesco PecoraTechnology ManagerVerified email at hq.doe.gov
Cristian StagarescuOptical Engineer SPE (Senior Principal Engineer), Photonic Devices Development, MACOMVerified email at macom.com

Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

Verified email at bu.edu - Homepage

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


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Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	804	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	636	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	561	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	555	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	554	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	525	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	412	1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	361	1993
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	337	1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	333	2011
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	330	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	314	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	293	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	286	1995
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	282	1994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	250	1994
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	236	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	234	1993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	218	1995

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