Emmanuel Igumbor
Emmanuel Igumbor
University of Johannessburg
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Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet
NY Dzade, KO Obodo, SK Adjokatse, AC Ashu, E Amankwah, CD Atiso, ...
Journal of Physics: Condensed Matter 22 (37), 375502, 2010
A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene
O Olaniyan, RE Maphasha, MJ Madito, AA Khaleed, E Igumbor, ...
Carbon 129, 207-227, 2018
Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range
VE Gora, FD Auret, HT Danga, SM Tunhuma, C Nyamhere, E Igumbor, ...
Materials Science and Engineering: B 247, 114370, 2019
Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE)
E Igumbor, CNM Ouma, G Webb, WE Meyer
Physica B: Condensed Matter 480, 191-195, 2016
A hybrid functional calculation of Tm3+ defects in germanium (Ge)
E Igumbor, WE Meyer
Materials Science in Semiconductor Processing 43, 129-133, 2016
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
E Omotoso, WE Meyer, PJJ van Rensburg, E Igumbor, SM Tunhuma, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017
A first principle hybrid functional calculation of TmGe3+-VGe defect complexes in germanium
E Igumbor, RE Mapasha, R Andrew, WE Meyer
Computational Condensed Matter 8, 31-35, 2016
Ab Initio Study of MgSe Self-Interstitial (Mgiand Sei)
E Igumbor, K Obodo, WE Meyer
Solid State Phenomena 242, 440-446, 2016
Ab␣ Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)
E Igumbor, RE Mapasha, WE Meyer
Journal of Electronic Materials 46, 3880-3887, 2017
The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC
E Omotoso, FD Auret, E Igumbor, SM Tunhuma, HT Danga, PNM Ngoepe, ...
Applied Physics A 124, 1-7, 2018
Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons
E Omotoso, AT Paradzah, PJJ van Rensburg, MJ Legodi, FD Auret, ...
Surface and Coatings Technology, 2018
Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs
SM Tunhuma, FD Auret, JM Nel, E Omotoso, HT Danga, E Igumbor, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017
Tuning the electronic structure and thermodynamic properties of hybrid graphene-hexagonal boron nitride monolayer
O Olaniyan, L Moskaleva, E Igumbor, A Bello
FlatChem 24, 100194, 2020
Rare earth interstitials in Ge: a hybrid density functional theory study
E Igumbor, RC Andrew, WE Meyer
Journal of Electronic Materials 46, 1022-1029, 2017
Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene
O Olaniyan, E Igumbor, AA Khaleed, AA Mirghni, N Manyala
AIP Advances 9 (2), 2019
Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width
E Omotoso, AT Paradzah, E Igumbor, BA Taleatu, WE Meyer, FD Auret
Materials Research Express 7 (2), 025901, 2020
Electronic properties of B and Al doped graphane: A hybrid density functional study
RE Mapasha, E Igumbor, NF Andriambelaza, N Chetty
Physica B: Condensed Matter 535, 287-292, 2018
Electrically active defects in p-type silicon after alpha-particle irradiation
HT Danga, FD Auret, SM Tunhuma, E Omotoso, E Igumbor, WE Meyer
Physica B: Condensed Matter 535, 99-101, 2018
A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer
RE Mapasha, E Igumbor, N Chetty
Journal of Physics: Conference Series 759 (1), 012042, 2016
Electronic properties and defect levels induced by n/p-type defect-complexes in Ge
E Igumbor, O Olaniyan, GM Dongho-Nguimdo, RE Mapasha, S Ahmad, ...
Materials Science in Semiconductor Processing 150, 106906, 2022
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