Deshun Qu
Deshun Qu
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Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo
ACS nano 8 (9), 9332-9340, 2014
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
P-type polar transition of chemically doped multilayer MoS2 transistor
X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
arXiv preprint arXiv:1604.08162, 2015
Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2
D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo
Advanced Materials 29 (39), 1606433, 2017
Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil
M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ...
Nature nanotechnology 15 (4), 289-295, 2020
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction
X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil
M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ...
Acs Nano 12 (6), 6117-6127, 2018
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4 (1), 4041, 2014
Controlled folding of single crystal graphene
B Wang, M Huang, NY Kim, BV Cunning, Y Huang, D Qu, X Chen, S Jin, ...
Nano letters 17 (3), 1467-1473, 2017
Effects of plasma treatment on surface properties of ultrathin layered MoS2
S Kim, MS Choi, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo
2D Materials 3 (3), 035002, 2016
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering
F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ...
Advanced Functional Materials 27 (4), 1604025, 2017
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance
X Liu, D Qu, Y Yuan, J Sun, WJ Yoo
ACS applied materials & interfaces 12 (23), 26586-26592, 2020
Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode
D Qu, X Liu, F Ahmed, D Lee, WJ Yoo
Nanoscale 7 (45), 19273-19281, 2015
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun
Applied Physics Letters 118 (23), 2021
Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation
X Liu, D Qu, L Wang, M Huang, Y Yuan, P Chen, Y Qu, J Sun, WJ Yoo
Advanced Functional Materials 30 (50), 2004880, 2020
Ambipolar MoS2 Field‐Effect Transistor by Spatially Controlled Chemical Doping
X Liu, Y Yuan, D Qu, J Sun
physica status solidi (RRL)–Rapid Research Letters 13 (9), 1900208, 2019
Homogeneous molybdenum disulfide tunnel diode formed via chemical doping
X Liu, D Qu, MS Choi, C Lee, H Kim, WJ Yoo
Applied Physics Letters 112 (18), 2018
Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor
HM Li, DY Lee, MS Choi, DS Qu, XC Liu, CH Ra, WJ Yoo
2013 IEEE International Electron Devices Meeting, 19.6. 1-19.6. 4, 2013
High performance WSe
X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun
Effects of plasma treatment on surface properties of 2D tungsten diselenide
I Moon, S Lee, D Qu, C Kim, WJ Yoo
APS March Meeting Abstracts 2018, Y37. 007, 2018
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