Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects X Liu, MS Choi, E Hwang, WJ Yoo, J Sun Advanced Materials, 2108425, 2021 | 194 | 2021 |
Magnetic sensors-A review and recent technologies MA Khan, J Sun, B Li, A Przybysz, J Kosel Engineering Research Express 3 (2), 022005, 2021 | 194 | 2021 |
Room temperature detection of individual molecular physisorption using suspended bilayer graphene J Sun, M Muruganathan, H Mizuta Science Advances 2 (4), e1501518, 2016 | 162 | 2016 |
Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates J Sun, ME Schmidt, M Muruganathan, HMH Chong, H Mizuta Nanoscale 8 (12), 6659-6665, 2016 | 84 | 2016 |
Electrically Tunable van der Waals Interaction in Graphene–Molecule Complex M Muruganathan, J Sun, T Imamura, H Mizuta Nano letters 15 (12), 8176-8180, 2015 | 74 | 2015 |
Low pull-in voltage graphene electromechanical switch fabricated with a polymer sacrificial spacer J Sun, W Wang, M Muruganathan, H Mizuta Applied Physics Letters 105 (3), 033103, 2014 | 71 | 2014 |
Tunable electronic structure of two-dimensional transition metal chalcogenides for optoelectronic applications Y Jing, B Liu, X Zhu, F Ouyang, J Sun, Y Zhou Nanophotonics 9 (7), 1675-1694, 2020 | 66 | 2020 |
Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor J Sun, T Iwasaki, M Muruganathan, H Mizuta Applied Physics Letters 106 (3), 033509, 2015 | 60 | 2015 |
Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor X Liu, X Zhou, Y Pan, J Yang, H Xiang, Y Yuan, S Liu, H Luo, D Zhang, ... Advanced Materials 32 (49), 2004813, 2020 | 44 | 2020 |
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance X Liu, D Qu, Y Yuan, J Sun, WJ Yoo ACS applied materials & interfaces 12 (23), 26586-26592, 2020 | 40 | 2020 |
ChemInform Abstract: Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review J Sun, J Kosel ChemInform 44 (47), 2013 | 32* | 2013 |
Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review J Sun, J Kosel Materials 6 (2), 500-516, 2013 | 32 | 2013 |
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun Applied Physics Letters 118 (23), 233101, 2021 | 31 | 2021 |
Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures Z Wang, X Liu, X Zhou, Y Yuan, K Zhou, D Zhang, H Luo, J Sun Advanced Materials, 2200032, 2022 | 30 | 2022 |
Gate tunable hole charge qubit formed in a Ge/Si nanowire double quantum dot coupled to microwave photons R Wang, RS Deacon, J Sun, J Yao, CM Lieber, K Ishibashi Nano letters 19 (2), 1052-1060, 2019 | 30 | 2019 |
Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch J Sun, M Muruganathan, N Kanetake, H Mizuta Micromachines 7 (7), 124, 2016 | 30 | 2016 |
Charge Density Depinning in Defective MoTe2 Transistor by Oxygen Intercalation X Liu, D Qu, L Wang, M Huang, Y Yuan, P Chen, Y Qu, J Sun, WJ Yoo Advanced Functional Materials, 2004880, 2020 | 28 | 2020 |
Finite-Element Modelling and Analysis of Hall Effect and Extraordinary Magnetoresistance Effect J Sun, J Kosel | 26 | 2012 |
Helical Hole State in Multiple Conduction Modes in Ge/Si Core/Shell Nanowire J Sun, RS Deacon, R Wang, J Yao, CM Lieber, K Ishibashi Nano letters 18 (10), 6144-6149, 2018 | 25 | 2018 |
Controllable Oxidation of ZrS2 to Prepare High‐κ, Single‐Crystal m‐ZrO2 for 2D Electronics Y Jin, J Sun, L Zhang, J Yang, Y Wu, B You, X Liu, K Leng, S Liu Advanced Materials 35 (18), 2212079, 2023 | 20 | 2023 |