Julien Frougier
Julien Frougier
IBM Research
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 symposium on VLSI technology, T230-T231, 2017
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ...
Physical Review B 90 (8), 085310, 2014
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
J Frougier, MG Sung, R Xie, C Park, S Bentley
US Patent 9,947,804, 2018
A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices
N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019
Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019
Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers
J Frougier, G Baili, M Alouini, I Sagnes, H Jaffrès, A Garnache, C Deranlot, ...
Applied Physics Letters 103 (25), 2013
Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
Inner spacer formation in a nanosheet field-effect transistor
J Frougier, R Xie
US Patent 10,651,291, 2020
Stacked nanosheet field-effect transistor with air gap spacers
J Frougier, R Xie, H Zang, K Cheng, T Yamashita, CC Yeh
US Patent 10,269,983, 2019
Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current
SD J. Frougier, N. Shukla, D. Deng, M. Jerry, A. Aziz, L. Liu, G. Lavallee ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
Complementary FETs with wrap around contacts and method of forming same
J Frougier, R Xie, PH Suvarna, H Niimi, SJ Bentley, A Razavieh
US Patent 10,192,867, 2019
Inner spacer formation for nanosheet field-effect transistors with tall suspensions
G Bouche, J Frougier, R Xie
US Patent 10,014,390, 2018
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
J Frougier, A Razavieh, R Xie, S Bentley
US Patent 9,991,352, 2018
Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors
J Zarpellon, H Jaffrès, J Frougier, C Deranlot, JM George, DH Mosca, ...
Physical Review B—Condensed Matter and Materials Physics 86 (20), 205314, 2012
Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
BS Tao, P Barate, J Frougier, P Renucci, B Xu, A Djeffal, H Jaffrès, ...
Applied Physics Letters 108 (15), 2016
Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping
J Frougier, G Baili, I Sagnes, D Dolfi, JM George, M Alouini
Optics express 23 (8), 9573-9588, 2015
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P Barate, S Liang, TT Zhang, J Frougier, M Vidal, P Renucci, X Devaux, ...
Applied Physics Letters 105 (1), 2014
Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming
R Xie, EJ Nowak, BC Paul, SR Soss, J Frougier, D Chanemougame, ...
US Patent 10,332,803, 2019
Insulated epitaxial structures in nanosheet complementary field effect transistors
J Frougier, R Xie, S Bentley, PH Suvarna
US Patent 10,256,158, 2019
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