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Hui Cai
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Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures
F Cadiz, E Courtade, C Robert, G Wang, Y Shen, H Cai, T Taniguchi, ...
Physical Review X 7 (2), 021026, 2017
7772017
Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures
J Kim, C Jin, B Chen, H Cai, T Zhao, P Lee, S Kahn, K Watanabe, ...
Science advances 3 (7), e1700518, 2017
3082017
Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
C Jin, J Kim, MIB Utama, EC Regan, H Kleemann, H Cai, Y Shen, ...
Science 360 (6391), 893-896, 2018
2132018
Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p–n vdW Heterostructure
S Yang, C Wang, C Ataca, Y Li, H Chen, H Cai, A Suslu, JC Grossman, ...
ACS applied materials & interfaces 8 (4), 2533-2539, 2016
1832016
Rhombus-shaped Co3O4 nanorod arrays for high-performance gas sensor
Z Wen, L Zhu, W Mei, L Hu, Y Li, L Sun, H Cai, Z Ye
Sensors and Actuators B: Chemical 186, 172-179, 2013
1512013
Fundamentals of lateral and vertical heterojunctions of atomically thin materials
A Pant, Z Mutlu, D Wickramaratne, H Cai, RK Lake, C Ozkan, S Tongay
Nanoscale 8 (7), 3870-3887, 2016
1452016
Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
H Cai, Y Gu, YC Lin, Y Yu, DB Geohegan, K Xiao
Applied Physics Reviews 6 (4), 2019
1412019
Optical spectroscopy of excited exciton states in monolayers in van der Waals heterostructures
C Robert, MA Semina, F Cadiz, M Manca, E Courtade, T Taniguchi, ...
Physical Review Materials 2 (1), 011001, 2018
1362018
A dielectric-defined lateral heterojunction in a monolayer semiconductor
MIB Utama, H Kleemann, W Zhao, CS Ong, FH da Jornada, DY Qiu, H Cai, ...
Nature Electronics 2 (2), 60-65, 2019
1242019
Bosonic condensation of exciton–polaritons in an atomically thin crystal
C Anton-Solanas, M Waldherr, M Klaas, H Suchomel, TH Harder, H Cai, ...
Nature materials 20 (9), 1233-1239, 2021
1002021
Two‐dimensional palladium diselenide with strong in‐plane optical anisotropy and high mobility grown by chemical vapor deposition
Y Gu, H Cai, J Dong, Y Yu, AN Hoffman, C Liu, AD Oyedele, YC Lin, Z Ge, ...
Advanced Materials 32 (19), 1906238, 2020
982020
Fine-scale mapping of the 5q11. 2 breast cancer locus reveals at least three independent risk variants regulating MAP3K1
DM Glubb, MJ Maranian, K Michailidou, KA Pooley, KB Meyer, S Kar, ...
The American Journal of Human Genetics 96 (1), 5-20, 2015
982015
Domain Architectures and Grain Boundaries in Chemical Vapor Deposited Highly Anisotropic ReS2 Monolayer Films
K Wu, B Chen, S Yang, G Wang, W Kong, H Cai, T Aoki, E Soignard, ...
Nano letters 16 (9), 5888-5894, 2016
952016
Synthesis of highly anisotropic semiconducting GaTe nanomaterials and emerging properties enabled by epitaxy
H Cai, B Chen, G Wang, E Soignard, A Khosravi, M Manca, X Marie, ...
arXiv preprint arXiv:1705.04052, 2017
822017
Biexcitonic optical Stark effects in monolayer molybdenum diselenide
CK Yong, J Horng, Y Shen, H Cai, A Wang, CS Yang, CK Lin, S Zhao, ...
Nature Physics 14 (11), 1092-1096, 2018
722018
Observation of bosonic condensation in a hybrid monolayer MoSe2-GaAs microcavity
M Waldherr, N Lundt, M Klaas, S Betzold, M Wurdack, V Baumann, ...
Nature communications 9 (1), 3286, 2018
652018
Unusual dimensionality effects and surface charge density in 2D Mg(OH)2
A Suslu, K Wu, H Sahin, B Chen, S Yang, H Cai, T Aoki, S Horzum, ...
Scientific reports 6 (1), 20525, 2016
602016
Highly efficient gas molecule-tunable few-layer GaSe phototransistors
S Yang, Q Yue, H Cai, K Wu, C Jiang, S Tongay
Journal of Materials Chemistry C 4 (2), 248-253, 2016
592016
Valley-dependent exciton fine structure and Autler–Townes doublets from Berry phases in monolayer MoSe2
CK Yong, MIB Utama, CS Ong, T Cao, EC Regan, J Horng, Y Shen, H Cai, ...
Nature materials 18 (10), 1065-1070, 2019
562019
Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition
S Yang, H Cai, B Chen, C Ko, VO Özçelik, DF Ogletree, CE White, Y Shen, ...
Nanoscale 9 (34), 12288-12294, 2017
542017
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